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吳哲洙,盧采均,서보혁,朴世光 경북대학교 산업기술연구소 1990 産業技術硏究誌 Vol.18 No.-
The Taegu City Authority has set up their master plan to adopt a city subway system since middle 1989 and a feasibility study was already submitted by Institute of Traffic Development in March 1990 and a fundamental planning contract was placed to Samwoo Engineering Co., Ltd. In compliance with this proceedure, the autors have surveyed the existing subway systems, bearing in mind to figure out which kind of system could be suitable to city Taegu. Initially, the subway systems, operating in Korea, were analyzed and the conclusion was approached that the existing subway system in Seoul and Pusan is not suitable to adopt to Taegu but a Light Traffic Vehicle system is efficient to adopt to the city.
Coherent terahertz spin-wave emission associated with ferrimagnetic domain wall dynamics
Oh, Se-Hyeok,Kim, Se Kwon,Lee, Dong-Kyu,Go, Gyungchoon,Kim, Kab-Jin,Ono, Teruo,Tserkovnyak, Yaroslav,Lee, Kyung-Jin American Physical Society 2017 Physical Review B Vol.96 No.10
<P>We theoretically study the dynamics of ferrimagnetic domain walls in the presence of a Dzyaloshinskii-Moriya interaction. We find that an application of a dc magnetic field can induce terahertz spin-wave emission by driving ferrimagnetic domain walls, which is not possible for ferromagnetic or antiferromagnetic domain walls. The Dzyaloshinskii-Moriya interaction is shown to facilitate terahertz spin-wave emission in a wide range of the net angular momentum by increasing the Walker breakdown field. Moreover, we show that spin-orbit torque combined with the Dzyaloshinskii-Moriya interaction also drives fast ferrimagnetic domain wall motion by emitting terahertz spin waves in a wide range of the net angular momentum.</P>
Ferrimagnetic Domain Wall Motion Induced by Damping-like Spin-orbit Torque
Se-Hyeok Oh,Kyung-Jin Lee 한국자기학회 2018 Journal of Magnetics Vol.23 No.2
We theoretically and numerically investigate ferrimagnetic domain wall motion driven by damping-like spinorbit torque. We find that the damping-like spin-orbit torque combined with the interfacial Dzyaloshinskii-Moriya interaction efficiently drives the ferrimagnetic domain wall especially at the angular momentum compensation point. We obtain the analytic expression of the domain wall velocity with respect to the current density and the net spin density, which is in agreement with numerical simulation. The analytic expression is applicable to arbitrary compensation conditions, ranging from the ferromagnetic limit to the antiferromagnetic limit, and is thus useful to design and interpret ferrimagnetic domain wall experiments at various temperatures or compositions.
비트라인 트래킹을 위한 replica 기술에 관한 연구
오세혁(Oh, Se-Hyeok),정한울(Jung, Han-wool),정성욱(Jung, Seong-Ook) 한국전기전자학회 2016 전기전자학회논문지 Vol.20 No.2
정적 램의 비트라인을 정밀하게 추적하는 감지증폭기의 enable 신호를 만들기 위해 replica bit-line 기술 (RBL)이 사용된다. 하지만, 공정으로 인한 문턱전압의 변화는 replica bit-line 회로에 흐르는 전류를 변화시키고 이는 감지증폭기의 enable 신호 생성 시간 (T<sub>SAE</sub>)을 변화시키며, 결과적으로는 읽기 동작을 불안정하게 한다. 본 논문에서는 conventional replica bit-line delay (RBL<sub>conv</sub> )구조 및 T<sub>SAE</sub>변화를 감소시킬 수 있는 개선 구조인 dual replica bit-line delay (DRBD)구조와 multi-stage dual replica bit-line delay(MDRBD)구조를 소개하고, 14nm FinFET 공정, 동작전압 0.6V에서 각 기술들에 대한 읽기 성공률이 6V를 만족하는 최대 on-cell 개수를 simulation을 통해 찾고 이때 각 구조에 대한 performance와 에너지를 비교했다. 그 결과, RBL<sub>conv</sub> 대비 DRBD와 MDRBD의 performance는 각각 24.4%와 48.3% 저하되고 에너지 소모는 각각 8%와 32.4% 감소된 것을 관찰하였다. Replica bit-line technique is used for making enable signal of sense amplifier which accurately tracks bit-line of SRAM. However, threshold voltage variation in the replica bit-line circuit changes the cell current, which results in variation of the sense amplifier enable time, T<sub>SAE</sub>. The variation of T<sub>SAE</sub> makes the sensing operation unstable. In this paper, in addition to conventional replica bit-line delay (RBL<sub>conv</sub>), dual replica bit-line delay (DRBD) and multi-stage dual replica bit-line delay (MDRBD) which are used for reducing T<sub>SAE</sub> variation are briefly introduced, and the maximum possible number of on-cell which can satisfy 6σ sensing yield is determined through simulation at a supply voltage of 0.6V with 14nm FinFET technology. As a result, it is observed that performance of DRBD and MDRBD is improved 24.4% and 48.3% than RBL<sub>conv</sub> and energy consumption is reduced which 8% and 32.4% than RBL<sub>conv</sub>.