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      • Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors

        Nam, Sungho,Hahm, Suk Gyu,Khim, Dongyoon,Kim, Hwajeong,Sajoto, Tissa,Ree, Moonhor,Marder, Seth R.,Anthopoulos, Thomas D.,Bradley, Donal D. C.,Kim, Youngkyoo American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.15

        <P>Three triple bond-conjugated naphthalene diimide (NDI) copolymers, poly{[<I>N</I>,<I>N</I>′-bis(2-R<SUB>1</SUB>)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-<I>alt</I>-[(2,5-bis(2-R<SUB>2</SUB>)-1,4-phenylene)bis(ethyn-2,1-diyl)]} (PNDIR<SUB>1</SUB>-R<SUB>2</SUB>), were synthesized via Sonogashira coupling polymerization with varying alkyl side chains at the nitrogen atoms of the imide ring and 2,5-positions of the 1,4-diethynylbenzene moiety. Considering their identical polymer backbone structures, the side chains were found to have a strong influence on the surface morphology/nanostructure, thus playing a critical role in charge-transporting properties of the three NDI-based copolymers. Among the polymers, the one with an octyldodecyl (OD) chain at the nitrogen atoms of imide ring and a hexadecyloxy (HO) chain at the 2,5-positions of 1,4-diethynylbenzene, P(NDIOD-HO), exhibited the highest electron mobility of 0.016 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>, as compared to NDI-based copolymers with an ethylhexyl chain at the 2,5-positions of 1,4-diethynylbenzene. The enhanced charge mobility in the P(NDIOD-HO) layers is attributed to the well-aligned nano-fiber-like surface morphology and highly ordered packing structure with a dominant edge-on orientation, thus enabling efficient in-plane charge transport. Our results on the molecular structure-charge transport property relationship in these materials may provide an insight into novel design of n-type conjugated polymers for applications in the organic electronics of the future.</P> [FIG OMISSION]</BR>

      • High‐Performance n‐Channel Thin‐Film Field‐Effect Transistors Based on a Nanowire‐Forming Polymer

        Hahm, Suk Gyu,Rho, Yecheol,Jung, Jungwoon,Kim, Se Hyun,Sajoto, Tissa,Kim, Felix S.,Barlow, Stephen,Park, Chan Eon,Jenekhe, Samson A.,Marder, Seth R.,Ree, Moonhor WILEY‐VCH Verlag 2013 Advanced functional materials Vol.23 No.16

        <P><B>Abstract</B></P><P>A new electrontransport polymer, poly{[<I>N,N′</I>‐dioctylperylene‐3,4,9,10‐bis(dicarboximide)‐1,7(6)‐diyl]‐<I>alt</I>‐[(2,5‐bis(2‐ethyl‐hexyl)‐1,4‐phenylene)bis(ethyn‐2,1‐diyl]} (PDIC8‐EB), is synthesized. In chloroform, the polymer undergoes self‐assembly, forming a nanowire suspension. The nanowire's optical and electrochemical properties, morphological structure, and field‐effect transistor (FET) characteristics are investigated. Thin films fabricated from a PDIC8‐EB nanowire suspension are composed of ordered nanowires and ordered and amorphous non‐nanowire phases, whereas films prepared from a homogeneous PDIC8‐EB solution consist of only the ordered and amorphous non‐nanowire phases. X‐ray scattering experiments suggest that in both nanowires and ordered phases, the PDIC8 units are laterally stacked in an edge‐on manner with respect to the film plane, with full interdigitation of the octyl chains, and with the polymer backbones preferentially oriented within the film plane. The ordering and orientations are significantly enhanced through thermal annealing at 200 °C under inert conditions. The polymer film with high degree of structural ordering and strong orientation yields a high electron mobility (0.10 ± 0.05 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>), with a high on/off ratio (3.7 × 10<SUP>6</SUP>), a low threshold voltage (8 V), and negligible hysteresis (0.5 V). This study demonstrates that the polymer in the nanowire suspension provides a suitable material for fabricating the active layers of high‐performance n‐channel FET devices via a solution coating process.</P>

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