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The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures
Ilke Taşçıoğlu,S¸ emsettin Altındal,İsmail Polat,Emin Bacaksız 한국물리학회 2013 Current Applied Physics Vol.13 No.7
In order to interpret the effect of metal work function on the formation of the barrier height at metal/semiconductor (M/S) interface, the CdS/SnO2/IneGa structures with several metals (Ag, Au, Al, Te) have been investigated by using IeV characteristics at room temperature. The main electrical parameters such as ideality factor (n), zero-bias barrier height (FBo), series resistance (Rs) have been determined and compared with each other. The values of n were found to be 3.00, 2.56, 3.83, and 3.31 for Al, Ag, Te, and Au/CdS/SnO2/IneGa structures, respectively. The values of FBo were also found to be 0.489 eV, 0.490 eV,0.583 eV, 0.591 eV for Al, Ag, Te, and Au/CdS/SnO2/IneGa structures, respectively. The FBo dependence on the metal work function (Fm) was found to vary almost linearly as FBo = 0.106Fm þ 0.028. The low value of the slope S (dFB/dFM y 0.106) shows a weak relationship between FBo and Fm due to serious Fermilevel pinning in the conduction band. In addition, the IeV plots have a rectifying behavior. The rectification ratio, defined by the ratio of forward to reverse current (RR = IF/IR) measured at the same absolute bias, was found as 11.96, 20.88, 35.82, and 75.61 for Al, Ag, Te, Au/CdS/SnO2/IneGa diodes, respectively. In addition, the values of Rs were determined from Ohm’s Law and Norde’s method. Analysis of IeV characteristics confirm that using of different metal (Al, Ag, Te, Au) has significant effect on electrical parameters of such devices.
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Demet Korucu,Abdulmecit Turut,S¸ emsettin Altındal 한국물리학회 2013 Current Applied Physics Vol.13 No.6
Capacitanceevoltage (CeV) and conductanceevoltage (G/ueV) measurements of the Au/n-GaAs Schottky barrier diodes (SBDs) in the wide frequency range of 10 kHze10 MHz at room temperature were carried out in order to evaluate the reason of negative capacitance (NC). Experimental results show that C and G/u are strong functions of frequency and bias voltage especially in the accumulation region. NC behavior was observed in the CeV plot for each frequency and the magnitude of absolute value of C increases with decreasing frequency in the forward bias region. Contrary to C, G/u increases with decreasing frequency positively in this region. NC behavior may be explained by considering the loss of interface charges at occupied states below Fermi level due to impact ionization processes. Such behavior of the C and G/u values can also be attributed to the increase in the polarization especially at low frequencies and the introduction of more carriers in the structure. The values of Rs decrease exponentially with increasing frequency according to literature. In addition, the values of C and G/u at 1 MHz were corrected to obtain the real diode capacitance by taking the effect of Rs into account.
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Ahmet G¨um¨us¸,G¨ul¸cin Ers¨oz,˙Ibrahim Y¨uceda˘g,S¨umeyye Bayrakdar,S¸ emsettin Altındal 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.5
The dielectric properties of Au/PPy/n-Si metal-polymer-semiconductor (MPS)-type Schottky barrier diodes (SBDs) were investigated by using capacitance-voltage (C-V ) and conductancevoltage (G/!-V ) measurements at various temperatures and voltages at frequencies of 100 kHz and 500 kHz. Both the real and the imaginary parts of the complex dielectric constant and dielectric loss ("0, "00) and of the electric modulus (M0, M00), as well as the conductivity (ac), were found to depend strongly on the temperature and the voltage. Both the C and G/! values increased with increasing applied voltage and had inversion, depletion, and accumulation regions as with a metal-insulator-semiconductor (MIS) type behavior. Both the dielectric constant ("0) and the dielectric loss ("00) increased with increasing temperature and decreased with increasing frequency. The loss tangent (tan ) vs. temperature curve had a peak at about 200 K for both frequencies. The M0 and the M00 values decreased with increasing temperature and became independent of the frequency at high temperatures. The series resistance (Rs) of the diode decreased with increasing temperature for the two frequencies while the ac increased. Such behaviors of the dielectric properties with temperature were attributed to the restructuring and reordering of charges at interface states/traps due to the varying temperature, the interfacial polarization, and the interfacial polymer layer. ln(ac) vs. q/kT plots had two distinct linear regions with different slopes for the two frequencies. Such behaviors of these plots confirmed the existence of two different conduction mechanisms corresponding to low and high temperatures. The values of the activation energy (Ea) were obtained from the slopes of these plots, and its value at low temperatures was considerably lower than that at high temperatures.
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