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Selective area epitaxy of complex oxide heterostructures on Si by oxide hard mask lift-off
Ruiguang Ning,Soo Young Jung,Haneul Choi,Byeong-hyeon Lee,Min-Seok Kim,Hyung-Jin Choi,Jun Young Lee,Jin Soo Park,Sung-Jin Jung,Ho Won Jang,Sung Ok Won,Hye Jung Chang,Ji-Soo Jang,Kyu Hyoung Lee,Byung C 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.2
Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronicdevices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patternsof epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructureson Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-offhard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and beselectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia(YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial(La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment toremove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realizationof multifunctional oxide-integrated electronics is provided in this study.