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Two-Dimensional Quantum-Mechanical Modeling for Strained Silicon Channel of Double-Gate MOSFET
Kidong KIM,A. TRELLAKIS,Jihyun SEO,Ohseob KWON,R. OBERHUBER,S. BIRNER,Taeyoung WON 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1