http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Podkaminer, Jacob (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Sharpened VO<sub>2</sub> Phase Transition via Controlled Release of Epitaxial Strain
Lee, Daesu,Lee, Jaeseong,Song, Kyung,Xue, Fei,Choi, Si-Young,Ma, Yanjun,Podkaminer, Jacob,Liu, Dong,Liu, Shih-Chia,Chung, Bongwook,Fan, Wenjuan,Cho, Sang June,Zhou, Weidong,Lee, Jaichan,Chen, Long-Qin American Chemical Society 2017 NANO LETTERS Vol.17 No.9
<P>Phase transitions in correlated materials can be manipulated at the nanoscale to yield emergent functional properties, promising new paradigms for nanoelectronics and nanophotonics. Vanadium dioxide (VO2), an archetypal correlated material, exhibits a metal insulator transition (MIT) above room temperature. At the thicknesses required for heterostructure applications, such as an optical modulator discussed here, the strain state of VO2 largely determines the MIT dynamics critical to the device performance. We develop an approach to control the MIT dynamics in epitaxial VO2 films by employing an intermediate template layer with large lattice mismatch to relieve the interfacial lattice constraints, contrary to conventional thin film epitaxy that favors lattice match between the substrate and the growing film. A combination of phase-field simulation, in situ real-time nanoscale imaging, and electrical measurements reveals robust undisturbed MIT dynamics even at preexisting structural domain boundaries and significantly sharpened MIT in the templated VO2 films. Utilizing the sharp MIT, we demonstrate a fast, electrically switchable optical waveguide. This study offers unconventional design principles for heteroepitaxial correlated materials, as well as novel insight into their nanoscale phase transitions.</P>
-
Isostructural metal-insulator transition in VO<sub>2</sub>
Lee, D.,Chung, B.,Shi, Y.,Kim, G.-Y.,Campbell, N.,Xue, F.,Song, K.,Choi, S.-Y.,Podkaminer, J. P.,Kim, T. H.,Ryan, P. J.,Kim, J.-W.,Paudel, T. R.,Kang, J.-H.,Spinuzzi, J. W.,Tenne, D. A.,Tsymbal, E. Y. American Association for the Advancement of Scienc 2018 Science Vol.362 No.6418
<P><B>Separating structure and electrons in VO<SUB>2</SUB></B></P><P>Above 341 kelvin—not far from room temperature—bulk vanadium dioxide (VO<SUB>2</SUB>) is a metal. But as soon as the material is cooled below 341 kelvin, VO<SUB>2</SUB> turns into an insulator and, at the same time, changes its crystal structure from rutile to monoclinic. Lee <I>et al.</I> studied the peculiar behavior of a heterostructure consisting of a layer of VO<SUB>2</SUB> placed underneath a layer of the same material that has a bit less oxygen. In the VO<SUB>2</SUB> layer, the structural transition occurred at a higher temperature than the metal-insulator transition. In between those two temperatures, VO<SUB>2</SUB> was a metal with a monoclinic structure—a combination that does not occur in the absence of the adjoining oxygen-poor layer.</P><P><I>Science</I>, this issue p. 1037</P><P>The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.</P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
