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Petykiewicz, Jan,Nam, Donguk,Sukhdeo, David S.,Gupta, Shashank,Buckley, Sonia,Piggott, Alexander Y.,Vuč,ković,, Jelena,Saraswat, Krishna C. American Chemical Society 2016 NANO LETTERS Vol.16 No.4
<P>A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium based lasers for on-chip optical interconnects.</P>
Kim, Youngmin,Petykiewicz, Jan,Gupta, Shashank,Vuckovic, Jelena,Saraswat, Krishna C.,Nam, Donguk The Institute of Electronics and Information Engin 2015 IEIE Transactions on Smart Processing & Computing Vol.4 No.5
We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.