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- 저자 : Peiyu Zhao (검색결과 2 건)
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Development of amine-functionalized hierarchically porous silica for CO2 capture
Guojie Zhang,Peiyu Zhao,Ying Xu 한국공업화학회 2017 Journal of Industrial and Engineering Chemistry Vol.54 No.-
A kind of hierarchical porous silica (HPS) was synthesized in a relatively mild condition and then devoted as the supports to fabricate TEPA-impregnated adsorbents for CO2 adsorption. HPS has different pore size distribution and the huge pore volume. These structure characteristics of HPS can mitigate the mass transfer resistance which occurs more serious in traditional carrier materials with single smaller channel. The CO2 adsorption performances of modified HPS were investigated in a homemade fixed bed reactor under different conditions. The HPS exhibited maximum CO2 adsorption capacities of 5.01 mmol/g when 60 wt.% TEPA loaded. It presented better TEPA loading properties and higher CO2 adsorption capacities than the majority of the single ordered mesoporous adsorbents according to the literature. When the adsorption experiments were repeated ten times, the amount of CO2 capture reduces from 5.01 mmol/g to 4.7 mmol/g, only 6.1% reduction. And the deactivation model which can describe the absorption of CO2 was adopted under different experiment conditions. In all these cases, the experimental data of CO2 adsorption gave a good agreement with the predicted results by the breakthrough model.
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High-breakdown-voltage GaN-based vertical FinFET design
Zilong Wang,Liang Liu,Peiyue Qi,Jiawei Chen,Lixia Zhao 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.3
In this study, GaN-based vertical FinFET device using HfO 2 as a high-κ dielectric gate layer to improve the breakdown voltage is designed. Simulation results show that a breakdown voltage as high as 2139 V can be achieved for the optimized GaN-based FinFET with a fin channel width of 200 nm, a channel doping concentration of 1 × 10 16 cm −3 , and a drift layer thickness of 10 μm. In addition, the proposed device has a low specific on-state resistance of 0.84 mΩ cm 2 , resulting in a large Baliga optimum figure of merit (FOM) 5.45 GW cm −2 . This work could lay a foundation to further improve the electrical performance of GaN-based vertical FinFET devices.
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