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Yi-Cheng Chu,Chih Chen,Nicholas Kao,Don Son Jiang 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.6
The thermo-mechanical properties of microbumps serving as interconnects betweenSi chips in three-dimensional integrated circuits were examined in this study. Arraysof SnAg microbumps were subjected to temperature cycling tests up to 2500 cycles. Extensive cracks formed in the microbumps, and some of them propagated across theentire microbump. A microstructural analysis by electron back scattering diffractionindicated that the cracks propagated along two paths: Sn grain boundaries with highmisorientation angles and SnAg/Ni3Sn4 interfaces. The average Sn grain size was only7.4 μm, implying a large proportion of grain boundaries per unit volume, whichfacilitated crack propagation across the microbump of 20 μm in diameter.