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RISS 인기검색어
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- 저자 : Muhammad Ghazanfar ABBAS (검색결과 2 건)
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Dastgeer, Ghulam,Khan, Muhammad Farooq,Nazir, Ghazanfar,Afzal, Amir Muhammad,Aftab, Sikandar,Naqvi, Bilal Abbas,Cha, Janghwan,Min, Kyung-Ah,Jamil, Yasir,Jung, Jongwan,Hong, Suklyun,Eom, Jonghwa American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.15
<P>Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS<SUB>2</SUB>. The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS<SUB>2</SUB> flakes in our BP/WS<SUB>2</SUB> van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10<SUP>4</SUP>, temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS<SUB>2</SUB> van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS<SUB>2</SUB> van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.</P> [FIG OMISSION]</BR>
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Association of Financial Distress and Predicted Bankruptcy: The Case of Pakistani Banking Sector
Hafeez ULLAH,Zhuquan WANG,Muhammad Ghazanfar ABBAS,Fan ZHANG,Umeair SHAHZAD,Memon Rafait MAHMOOD 한국유통과학회 2021 The Journal of Asian Finance, Economics and Busine Vol.8 No.1
The banking sector is one of the most important sectors in Pakistan’s struggling economy. Recent studies have recommended that suitable methods can be applied to predict bankruptcy. In this context, this work analyzes Pakistan’s banking sector’s financial status through the five-factor Altman Z-score model, which determines the probability of bankruptcy for an organization. Banking data has been collected through the Pakistan Stock Exchange (PSX) in the period 2013-2017. The Z-score assessment criteria is defined as: Z> 2.99 - “safe” zone; Z> 1.8 Z>2.98- “grey” zone; and Z <1.8 - “distress” zone. Results show good predictions for the local banking industry, while most foreign Pakistani banks were found bankrupt with the Z-score below 1.1. One of the financial risks investors face when investing in any company is the risk of bankruptcy. One of the most used models for predicting financial distress for any company is Altman’s Z-score model. On the other hand, the Z-score analysis suggests that all banking establishments are not bankrupt because they have sufficient ability to control bankruptcy. At the same time, foreign banks failed financially and would not be able to be sustained in the future because they do not have the ability to pay the short-term and long-term debt.
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