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Shaikh J. Mohiuddin,Md. Ashraful Haque,Md. Manjurul Haque,Md. Tofazzal Islam,Partha S Biswas 한국육종학회 2020 Plant Breeding and Biotechnology Vol.8 No.4
Molecular mapping and application of quantitative trait loci (QTL) associated with a higher level of grain Zinc is aviable option to enhance zinc content in rice through breeding. An F2 population derived from a cross between a high yielding variety,BRRI dhan28, and a locally adapted Zn enriched cultivar, Kalobokri was used to map QTLs associated with higher levels of Zn in ricegrain. The F2:3 progenies varied significantly (P < 0.0001) in Zinc contents with a mean value remarkably higher than those in thesuperior parent. Through marker by trait analysis using IciMapping, we detected a large-effect QTL, qGZn3 on chromosome 3 betweenRM5419 and RM1164 spanning 1.83 Mb interval at the 0.05 level of significance with a threshold LOD of 10.61. This QTL showed a21.1% (R2value) contribution to the total phenotypic variation for zinc content in the unpolished rice grains with 4.68 μg/g additiveeffect of Kalobokri alleles. We also detected 11 metal homeostasis related genes within the interval of qGZn3. In-silico analysis showedthat four expressed sequence tags of one candidate gene (LOC_Os03g22810) encoding Cu/Zn superoxide dismutase, a metal-bindingprotein, are highly active in the endosperm as well as in the embryonic tissue of rice grain. Taken together, our results suggest thatqGZn3 is a major QTL associated with high grain Zn content in the F2 progenies of rice. Our findings offer valuable genetic resourcesto facilitate breeding for high yielding and Zinc-enriched rice variety.
K. A. S. M. Ehetshamul Haque,Tahmid Nahian Bin Quddus,Mohammad Tanvirul Ferdaous,Md. Ashraful Hoque 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.1
In this paper, efficiency variation with change in device parameters (layer thickness and doping concentration)has been investigated in an Al0.7Ga0.3As/Al0.48In0.52As heterojunction solar cell using Adept 1D simulation software. The device uses a n-type Al0.7Ga0.3As top layer (Emitter), a p-type Al0.48In0.52As middle layer (Base),and a p-type Ga0.67In0.33As bottom layer, which, under high doping, acts as a passivating (BSF) layer. Germanium (Ge) substrate (p-doped) is used for the structure. Variation in efficiency is plotted against a particular changing parameter, keeping every other parameter fixed at some default value. After analysing the variation curves,two optimized designs have been proposed, which yield 19.57% and 20.56% efficiency, respectively.