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Jeongyun Lee,Wanjae Park,Haksun Lee,Tokasiki Ken,Dong Hwan Kim,Kyoungsub Shin,Ilsub Chung 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
The distortion of the capacitance-voltage curve and the threshold voltage change caused by tunnel oxide degradation in connection with metal pad etch-induced plasma damage was investigated in 0.04 μm flash memory technology. The metal pad etch, as a final plasma process of IC fabrication contain cumulative plasma process-induced damage (P2ID). However, no metal pad etch-induced plasma damage, such as gate threshold voltage (Vth) change and hot temperature stress, has yet been reported because it is difficult to accurately analyze regardless of the previous processes. Therefore, to clearly analyze the P2ID on a metal pad, test element group (TEG) module to measure the interface traps (Nit) with a charge-pumping method and a simple-plasma-damage-monitor (SPDM) created to replace CHARM2. Consequently, we showed that the P2ID was correlated with the position of the chips or the etch rate uniformity map as a result of the plasma non-uniformity in each plasma etcher and the plasma condition. The distortion of the capacitance-voltage curve and the threshold voltage change caused by tunnel oxide degradation in connection with metal pad etch-induced plasma damage was investigated in 0.04 μm flash memory technology. The metal pad etch, as a final plasma process of IC fabrication contain cumulative plasma process-induced damage (P2ID). However, no metal pad etch-induced plasma damage, such as gate threshold voltage (Vth) change and hot temperature stress, has yet been reported because it is difficult to accurately analyze regardless of the previous processes. Therefore, to clearly analyze the P2ID on a metal pad, test element group (TEG) module to measure the interface traps (Nit) with a charge-pumping method and a simple-plasma-damage-monitor (SPDM) created to replace CHARM2. Consequently, we showed that the P2ID was correlated with the position of the chips or the etch rate uniformity map as a result of the plasma non-uniformity in each plasma etcher and the plasma condition.