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KiranJain,R.K.Sharma,SandeepKohli,K.N.Sood,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Cd-In-Te films were electro-deposited potentiostatically over SnO2:F coated glass substrates from aqueous acidic solutionscontainingCdSO 4, InCl3 and TeO2 at 85 .C. Cyclic voltammetric studies were carried out to study the growth process and thepotential range for ternary CdInTe thin film deposition. Crystalline structure and surface morphological studies were carried outOptical transmission studies showed a direct band structure and the band gap of the deposited film change with the depositionpotential. A typical decrease from 1.2 to 1.1 eV in the optical band gap was observed on increasing the cathodic deposition potentialfrom)0.5 to)0.54 V (SCE).. 2002 Elsevier Science B.V. All rights reserved.
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Growth of CdS and CdTe thin films for the fabrication of n-CdS/p-CdTe solar cell
R.K.Sharma,KiranJain,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Thin n-CdS and p-CdTe lms were prepared by chemical spray pyrolysis and electrochemical deposition respectively. Excessivesulphur in the spray solution has promoted grain growth in CdS film. Microstructural features of CdS film with stoichiometric Cd:Sformity, reduced grain boundary losses of current and improved shunt resistance through inhibition of leakage of current at narrowgrain boundary or void site is expected and is indeed observed. Electrodeposition of CdTe films, beside the eect of the inherentprocess parameters, is also aected by crystalline and microstructural features of the underlyingCdS. Nucleation of CdTe film isremarkably aected by CdS film spray deposited over glass substrate. Cell performance considerably depends upon the windowlayer CdS and the properties of sprayed CdS film depends considerably on the Cd:S ratio in the spray solution. A higher S content inCdS film resistivity. A typical increase in cell eciency was found to increase from 8% to 10.5% usingCdS film with Cd:S ratio as1:1.1 and 1:1.3 respectively.. 2002 Elsevier Science B.V. All rights reserved.
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