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Sung-Kwi Kang,Nam-Yong Park,Kenji Ochiai,Mun-Il Kang,Ho-Sung Cho,Chang-Baig Hyun,Sang-Ki Kim,Su-Jin Park,You-Jung Kim,Jae-Ho Jeong,Kyoung-Oh Cho 한국실험동물학회 2005 Laboratory Animal Research Vol.21 No.2
Paraffin-embedded tissue sections of surgically removed skin tumor from an eight-year-old male Shih-Tzu dog were analyzed for proliferation state using immunohistochemical detection of proliferating cell nuclear antigen (PCNA) and for DNA ploidy using flow cytometry. Histologically, tumor was diagnosed as well differentiated squamous cell carcinoma. The percentage of PCNA-positive cells, which distributed through tumor lesions, was 61.4%. In addition, PCNA-positive cells in the cancer pearls were detected only at the periphery of the neoplastic epithelial structures. The ploidy of this tumor detecting by DNA flow cytometry was clearly aneuploid. From these results, the proliferation state of this tumor determined by PCNA-immunostaining and DNA ploidy revealed malignant, even this tumor was diagnosed as well differentiated squamous cell carcinoma.
Rathi, Servin,Lee, Inyeal,Lim, Dongsuk,Wang, Jianwei,Ochiai, Yuichi,Aoki, Nobuyuki,Watanabe, Kenji,Taniguchi, Takashi,Lee, Gwan-Hyoung,Yu, Young-Jun,Kim, Philip,Kim, Gil-Ho American Chemical Society 2015 NANO LETTERS Vol.15 No.8
<P>Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.</P>