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Jongbum Nah,Eun Kyu Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.II
InAs self-assembled quantum-dot (QD) structures with In$_{0.3}$Ga$_{0.7}$As strain-reducing layers were successfully grown on GaAs substrates by migration-enhanced epitaxy. At room temperature, the photoluminescence (PL) peak wavelength of QDs appeared at $\sim$1.3 ${\mu}$m, which is applicable for fiber-optic communications. After introducing two additional periods of InAs/InGaAs supperlattice layers on the dots, the PL peak showed a further redshift, as well as a sharper full-width at half maximum (FWHM). Emission at a peak wavelength of 1.45 $\mu$m with a FWHM of 30 meV was achieved for InAs QDs on GaAs.
Jongbum Nah 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
InAs self-assembled quantum-dots (QDs) capped with InGaAs strain-reducing layers (SRLs) grown by using the molecular-beam epitaxy (MBE) and the migration-enhanced epitaxy (MEE) methods were fabricated on GaAs substrates in a solid-source MBE system and their optical properties were investigated by using the temperature-dependent photoluminescence (PL). The PL results for QDs capped with a SRL by using MEE showed a lower peak energy and a smaller full width at half maximum of the spectral band compared to those of QDs with a SRL grown by using MBE. The activation energies for quenching of the QD PL were obtained by fitting the temperature-dependent PL data and appeared to be comparable to the energy differences between the PL peaks of the ground states and the SRLs, indicating that the escape of electron-hole pairs from the QDs to the SRL is probably the dominant channel for quenching at high temperatures.
Bandgap Tuning in InGaAs/InGaAsP Laser Structure by Quantum Well Intermixing
Nah Jongbum,Kam PatrickLi Optical Society of Korea 2005 한국광학회지 Vol.16 No.2
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.