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Annealing Effects on CuInS2 Thin Films Grown on Glass Substrates by Using Pulsed Laser Deposition
Lei Zhang,Jingang Fang,Mingkai Li,Xunzhong Shang,Yunbin He,강태원 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.3
CuInS2 thin films have been deposited on glass substrates at low temperature by using a self-madeceramic target and the pulsed laser deposition method. Polycrystalline and near-stoichiometricCuInS2 films with a band gap energy of 1.45 eV are obtained by post-annealing/sulfurization ata temperature of 500 C. X-ray diffraction reveals a highly (112) preferential orientation of theCuInS2 thin films while the Raman spectrum indicates the coexistence of a CuInS2 chalcopyritephase and CuAu orderings. A polymorphic transformation of metastable CuAu ordering into theequilibrium chalcopyrite structure takes place at a post-annealing temperature of 500 C with theCuxS phase being segregated at the surface. Further, the morphologies and the chemical statesof the films before and after annealing are characterized by atomic force microscopy and X-rayphotoelectron spectroscopy, respectively.