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Theoretical models of ferromagnetic III-V emiconductors
T.Jungwirth,JairoSinova,J.Kucera,A.H.MacDonald 한국물리학회 2003 Current Applied Physics Vol.3 No.5
Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containingmagnetic elements toward room temperature. Reaching this goal would make information technology applications of these ma-terials likely. In this article we briey review the status of work over the past ve years which has attempted to achieve a theoreticalunderstanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compoundsthat have the highest transition temperatures appear to be well understood, and ecient computation methods have been developed. 2003 Published by Elsevier B.V.