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Resonant Raman Study on the Nitrogen-Induced Electronic States in GaAs$_{1-x}$N$_{x}$
M. J. Seong,A. Mascarenhas,정현식,J. F. Geisz,M. C. Hanna,윤석현 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
Nitrogen-induced electronic states, encompassing E0 through E+, in GaAs1%) have been probed using resonant Raman scattering. We have observed strong Raman intensity resonance enhancement for the L and X zone boundary phonons as well as the zone center phonons for excitations near the E+ transition, which provides unambiguous evidence of signicant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1 The resonant Raman scattering prole for the asymmetric line-width broadening of the LO phonon exhibits two distinct maxima attributed to states arising from a splitting of the quadruply degenerate conduction band near the L-point.