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Flux growth and liquid-phase epitaxy of Mn6+-doped barium sulfate
D. Ehrentraut,Y.E. Romanyuk,M. Pollnau 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.3
We investigated the conditions for the growth of Mn6+-doped from the ternary eutectic NaCl-KCl-CsCl solvent at temperatures of 480-600oC. The doping complex ion MnO42− can easily substitute the SO4 2− complex ion in BaSO4 with its orthorhombic space group Pnma. The growth of Mn6+-doped BaSO4 was performed using liquid-phase epitaxy by applying an advanced growth strategy. High-quality layers were grown according to the step-flow mode with step heights of maximum 1.5 unit cells and step widths of 200 nm. The defect density was reduced to 1 ×103 and 7×104 etch pits cm−2 for (011) and (001), respectively.
I. C. Robin,A. Jouini,C. Tavares,J. Rothman,G. Feuillet,D. Ehrentraut,T. Fukuda 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Homoepitaxial layers grown by liquid phase epitaxy on hydrothermally grown ZnO bulk wafers are studied by means of temperature-dependent photoluminescence. The properties of the films are compared to those of hydrothermal ZnO substrates. The effect of Ga doping is studied. Liquid phase epitaxy is shown to be a promising method for achieving substantial variations of the electrical and the luminescent properties of ZnO.