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RISS 인기검색어
- 검색키워드
- 저자 : Congxin Xia (검색결과 3 건)
- 무료
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- 유료
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Exciton states in zinc-blende InGaN/GaN quantum dot
Congxin Xia,Fengchn Jiang,Shuyi Wei 한국물리학회 2008 Current Applied Physics Vol.8 No.2
Within the framework of effective-mass approximation, exciton states confined in zinc-blende(ZB) InGaN/GaN quantum dot(QD) are investigated by means of a variational approach, considering finite band offsets. The ground-state exciton binding energy and the interband emission energy are investigated as functions of QD structural parameters in detail. Numerical results show clearly that both the QD size and In content of InGaN have a significant influence on the exciton states and interband optical transitions in the ZB InGaN/GaN QD. Within the framework of effective-mass approximation, exciton states confined in zinc-blende(ZB) InGaN/GaN quantum dot(QD) are investigated by means of a variational approach, considering finite band offsets. The ground-state exciton binding energy and the interband emission energy are investigated as functions of QD structural parameters in detail. Numerical results show clearly that both the QD size and In content of InGaN have a significant influence on the exciton states and interband optical transitions in the ZB InGaN/GaN QD.
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The donor bound exciton states in wurtzite GaN quantum dot
Yaming Liu,Congxin Xia,Shuyi Wei 한국물리학회 2009 Current Applied Physics Vol.9 No.1
Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height. Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height.
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Li, Chenhui,Yi, Seho,Xia, Congxin,Cui, Ping,Niu, Chunyao,Cho, Jun-Hyung,Jia, Yu,Zhang, Zhenyu American Chemical Society 2016 NANO LETTERS Vol.16 No.10
<P>Quantum growth refers to the phenomena in which the quantum mechanically confined motion of electrons in metallic wires, islands, and determines their overall structural stability as well as their physical and chemical properties. Yet to date, there has been a lack of a unified understanding of quantum growth with respect to the dimensionality of the nanostructures as well as the valency of the constituent atoms. Based on a first-principles approach, we investigate the-stability of nanowires, nanoislands, and ultrathin films of prototypical metal elements. We reveal that the Friedel oscillations generated at the edges (or surfaces) of the nanostructures cause corresponding oscillatory behaviors in their stability, leading to the existence of highly preferred lengths (or thicknesses). Such magic lengths of the nanowires are further found to depend on both the number of valence electrons and the radial size, with the oscillation period monotonously increasing for alkali and group IB metals, and monotonously decreasing for transition and group IIIA-VA metals. When the radial size of the nanowires increases to reach similar to 10 A, the systems equivalently become nanosize islands, and the oscillation period saturates to that of the corresponding ultrathin films. These findings offer a generic perspective of quantum growth of different classes of metallic nanostructures.</P>
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