http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Chiem, Chu Van,Seo, Hyung-Kee,Ansari, Shafeeque G.,Kim, Gil-Sung,Seo, Jae Myung,Shin, Hyung-Shik 한국화학공학회 2003 Korean Journal of Chemical Engineering Vol.20 No.6
In this paper, the growth of Lonsdaleite diamond using hot-filament chemical vapor deposition (HFCVD) on flashed and reconstructed Si (100) is reported. Surface morphology studies using scanning electron microscopy (SEMI show that the film is composed of decahedron and icosahedron diamond particles. The X-ray -tion (XRD) pattern has a strongest peak at 47° and a peak at 41°. which is indicative of Lonsdaleite name of the grown diamond film. The Raman spectrum of the film shows a broadened diamond peak at wave number of 1,329 ㎝^(-1), which has shifted towards the peak position corresponding to Lonsdaleite nahxe of the diamond (1,326 ㎝^(-1)).
신형식,김영순,강길선,Mushtaq Ahmad Dar,Shafeeque G. Ansari,Hyung-il Kim,Chu Van Chiem 한국화학공학회 2005 Korean Journal of Chemical Engineering Vol.22 No.5
Diamond films on the p-type Si(111) and p- type(100) substrates were prepared by microwave plasma chemical vapor deposition (MWCVD) and hot-filament chemical vapor deposition (HFCVD) by using a mixture of methane CH4 and hydrogen H2 as gas feed. The structure and composition of the films have been investigated by Xray Diffraction, Raman Spectroscopy and Scanning Electron Microscopy methods. A high quality diamond crystalline structure of the obtained films by using HFCVD method was confirmed by clear XRD-pattern. SEM images show that the prepared films are polycrystalline diamond films consisting of diamond single crystallites (111)-orientation perpendicular to the substrate. Diamond films grown on silicon substrates by using HFCVD show good quality diamond and fewer non-diamond components.