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다원자가 금속산화물 기반 박막트랜지스터의 특성 및 안정성 평가
윤명구(Myeong Gu Yun),안철현(Cheol Hyoun Ahn),조성운(Sung Woon Cho),김소희(So Hee Kim),김예균(Ye Kyun Kim),조형균(Hyung Koun Cho) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
We demonstrate that depending on the channel structure, the addition of multivalent V atoms into ZTO films can induce a dual electrical performance: semi-insulating and semiconducting. Moreover, in order to catch both high mobility and high stability in zinc tin oxide (ZTO)-based thin film transistor (TFT), we fabricated VZTO/ZTO bi-layer TFT in which V is a doping element that can act as a oxygen vacancy suppressor. The VZTO/ZTO bi-layer TFT showed a field effect mobility of 16.9cm²/(V·s), comparable to that of ZTO TFT (15.3cm²/(V·s)). In addition, it showed much better stability (ΔVth = -0.9 V) under negative bias illumination stress (NBIS) than that of ZTO TFT (ΔVth = -7.3 V).