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Quantum Effect and Structural Optimization of FinFET with 2-D Poisson-Schr?dinger Solver
Kidong Kim,Alexandros Trellakis,Jihyun Seo,Ohseob Kwon,Stefan Birner,Taeyoung Won 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.2
We fabricated quantum wire metal-oxide-semiconductor eld-eect transistors (MOSFET) by using conventional photolithography with a 1.5-m resolution. We obtained a 30-nm-width quantum wire with the help of anisotropic wet etching and reactive ion etching (RIE) on a silicon-on-insulator (SOI) substrate. This narrow dimension of the wire and the gate bias between silicon and silicon dioxide make electrons move along the wire due to one-dimensional quantum connement eects. Quasi-step-like conductance versus gate voltage, which is typical evidence of one-dimensional motion, has been observed, even at temperatures below 173 K. The photo-responsivity of the quantum MOSFET was larger than 1 102 A/W at a wavelength of 633 nm.