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RISS 인기검색어
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- 저자 : A.S. Kapadia (검색결과 2 건)
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PEEK/SiO2 Composites with High Thermal Stability for Electronic Applications
RK Goyal,K.A. Rokade,A.S. Kapadia,B. S. Selukar,B. Garnaik 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.1
Thermal and mechanical properties of new high performance polymer matrix composites based on poly(etheretherketone)(PEEK) as matrix and crystalline-silica (SiO2) as reinforcement were discussed for application in electronic packaging substrates or printed circuit boards. The content of SiO2 was varied between 0 and 50 wt. %. Scanning electron microscopy showed uniform dispersion of SiO2 particles in the matrix. Thermogravimetry analysis showed significant increase in thermal stability and char yield with increase in SiO2content in the matrix. Differential scanning calorimetry showed that SiO2 had a heterogeneous nucleating effect on PEEK, leading to an increase in peak temperature of crystallization and onset crystallization temperature of the composites compared to a pure matrix. The microhardness increased approximately 42%. A modified rule of mixtures with a strengthening efficiency factor equal to 0.06 fit the data nicely. The results show that the prepared PEEK/SiO2 composites may have potential applications in electronics.
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Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
Takei, Kuniharu,Fang, Hui,Kumar, S. Bala,Kapadia, Rehan,Gao, Qun,Madsen, Morten,Kim, Ha Sul,Liu, Chin-Hung,Chueh, Yu-Lun,Plis, Elena,Krishna, Sanjay,Bechtel, Hans A.,Guo, Jing,Javey, Ali American Chemical Society 2011 NANO LETTERS Vol.11 No.11
<P>Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5–50 nm. First, optical absorption studies are performed by transferring InAs “quantum membranes” (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-11/nl2030322/production/images/medium/nl-2011-030322_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl2030322'>ACS Electronic Supporting Info</A></P>
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