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조한나(Han-nah Joh),박영배(Young-Bae Park),김세호(Se-Ho Kim),윤영(Young Yun) 한국항해항만학회 2007 한국항해항만학회 학술대회논문집 Vol.2 No.춘계
본 논문에서는 CMOS(Complementary Metal Oxide Semi Conductor)를 이용한 L 대역 2단 전력증폭기(Power Amplifier)를 설계하였고, 제작하였다. 제안된 전력증폭기의 출력전력이 최대가 되도록 증폭기의 출력 정합회로를 설계하였고, 최대출력 임피던스는 load-pull 기법을 이용하여 결정하였다. 설계된 전력증폭기는 TSMC CMOS 0.18 ㎛ RF공정으로 제작되었다. 제작된 전력증폭기는 1.5 GHz에서 11.28 dB의 이득과 15 dBm의 출력전력을 보였다. In this paper, CMOS(Complementary Metal Oxide Semiconductor) 2-stage power amplifier was designed and fabricated for L-band application. In order to obtain optimal power characteristic, the power amplifier was designed using optimal power matching technique and load-pull technique. The CMOS power amplifier was fabricated by TSMC 0.18 ㎛ CMOS. The power amplifier showed a gain of 10dB and output power of 15dBm, at 1.5GHz.
해상통신 시스템 응용을 위한 0.18㎛ Si CMOS를 이용한 L-대역 전력 중폭기의 개발
박영배(Young-Bae Park),조한나(Han-Nah Joh),김세호(Se-Ho Kim),윤영(Young Yun),박찬섭(Chan-Sub Park),한정우(Jeong-Woo Han) 한국마린엔지니어링학회 2007 한국마린엔지니어링학회 학술대회 논문집 Vol.2007 No.-
In this paper, The L-band 2-stage power amplifier employing 0.18㎛ Si CMOS(Complementary Metal Oxide Semiconductor) was designed and fabricated for application to maritime communication system. In order to obtain optimal power characteristic, the proposed power amplifier was designed using optimal power matching technique and load-pull technique. The Si CMOS 2-stage power amplifier was fabricated by TSMC 0.18㎛ Si CMOS RF process. The fabricated 2-stage power amplifier showed a output gain of 11.28㏈ and output power of 15.33㏈m at L-band.
박영배(Young-Bae Park),조한나(Han-Nah Joh),김세호(Se-Ho Kim),윤영(Young Yun) 한국항해항만학회 2007 한국항해항만학회 학술대회논문집 Vol.2 No.춘계
In this paper, we developed CMOS(Complementary Metal Oxide Semiconductor) chip set for L-band applications. The CMOS chip set includes LNA(Low Noise Amplifier), PA(Power Amplifier), and small signal amplifier. The CMOS chip set was fabricated by 0.18um CMOS of TSMC. The PA showed a gain of 10dB, and an output power of 11dBm at 1.2GHz, and the LNA showed a noise figure of 5dB. The small signal amplifier showed a gain of 10dB. CMOS chip set exhibited good RF performances at L-band.
소형화된 능동형 90˚ 전력 분배기 및 결합기에 관한 연구
박영배(Young-Bae Park),김세호(Se-Ho Kim),조한나(Han-Nah Joh),박찬섭(Chan-Sub Park),한정우(Jeong-Woo Han),윤영(Young Yun) 한국마린엔지니어링학회 2007 한국마린엔지니어링학회 학술대회 논문집 Vol.2007 No.-
This paper proposes the miniaturized active 90° power divider and combiner. Conventional passive 90° power divider and combiners can't be integrated on MMIC because of their very larger size. Therefore, the miniaturized 90° power divider and combiners are required for a development of highly integrated MMIC. For this paper, the miniaturized active 90° power divider and combiner employing InGaP/GaAs HBT was fabricated on GaAs substrate. A size of fabricated active 90° power divider and combiner was reduced the 1.67 × 0.87 ㎜ and 2.42×1.05 ㎜, which was 31.6% and 2.2 % of conventional passive 90° power coupler respectively. The fabricated active 90° power divider showed a gain characteristic about 8.4 ㏈ and 7.9 ㏈, and a phase-difference division characteristic of -89.3° at 12 ㎓. The fabricated active 90° power combiner showed a gain characteristic about 9.4 ㏈ and 10.5 ㏈, and a phase-difference coupling characteristic of - 92.6° at 2.4 ㎓. The highly miniaturized active 90° power divider and combiner exhibited good RF performances comparable to conventional passive 90° power couplers.