http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CMOS 이미지 센서용 실리콘 나노와이어 포토트렌지스터 설계
전현성(Hyunsung Jun),최조현(Johyeon Choi),황진영(Jinyoung Hwang) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
In this paper, a periodic array of phototransistors is introduced for CMOS image sensors. Each device comprises a Si nanowire (NW) of varying diameters positioned above a bipolar junction transistor (BJT). The Si NW connects directly to the BJTs base region. Si NWs with distinct diameters resonate at particular wavelengths, leading to high optical absorption at the distinct regions of the visible light spectrum, namely blue, green, or red. Upon absorption, the photocurrent from the Si NW is injected into the base region, causing the BJT to transition from cutoff to the forward active mode. The amplifying function of the transistor yields superior quantum efficiency, as corroborated by TCAD simulations.