http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
SANOS 메모라 셀 트랜지스터의 다른 Charge Trapping layer에 따른 전기적 특성 및 신뢰성 분석
이승석(Seaung-Suk Lee),배기현(Gi-Hyun Bae),이희덕(Hi-Deok Lee),이가원(Ga Won Lee),박성수(Sung-Soo Park),주한수(Han-Soo Joo),최원호(Won-Ho Choil),한인식(In-shik Han),엄재철(Jae-Chul Om) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
In this paper, we analyzed the process-dependent electric characteristics of Silicon-Al₂O₃-Nitride-Oxide -Silicon (SANDS) memory cell transistors. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. The program/erase speed and data retention under two different stress conditions, which are Fowler-Nordheim (FN) and Hot-carrier injection (HCI) stress, are evaluated. Besides, the reliability characteristics of SANDS devices were also analyzed by measuring the data retention and endurance properties according to the temperature.