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정규상,석전성 (石田誠),중촌철랑 (中村哲郞) ( Gwiy Sang Chung,Makoto Ishida,Tetsuro Nakamura ) 한국센서학회 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/SiO₂/Si and Si/Al₂O₃/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to 300 . In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the 50I pressure sensors was controlled to within a standard deviation of ±2.3 % over 200 devices. Moreover, the pressure sensors fabricated on the double SOI (Si/Al₂O₃/Si/SiO₂/Si) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
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범용 multiple subjects바이오텔레미트리 CMOS IC의 제작
서희돈,中村哲郞,박종대,松本佳恒 경북대학교 센서기술연구소 1994 연차보고서 Vol.1994 No.-
본 연구는 5㎛ n-well CMOS 공정기술에 의해 제조된 다중생체 바이오텔레미트리 시스템의 제작과 그 동작특성을 기술하였다. 본 시스템은 8 개의 피측정체로부터 선택된 피측정체의 7 개의 생체신호를 연속적으로 체외로 전송 가능하다. FM 송신기와 센서인터페이스 회로를 제외한 체내삽입 시스템을 4×4㎟의 크기로 집적화 하였다. 이 IC를 사용하여 3×3×2.5㎠의 하이브리드 패키지로 내부시스템을 조립할 수 있다. 본 시스템의 주된 특징은 8개의 피측정체로부터 하나를 선택할 수 있고, 또한 선택된 피측정체의 생체신호를 연속측정 가능하고, 외부시스템의 커맨드신호와 선택신호 신호에 의해 체내 삽입된 전원의 ON/OFF가 가능하다. 본 시스템의 목적은 체내 삽입된 서로 다른 센서로부터 계측된 생체정보를 무선으로 전송 가능하여 외부기록계로 생체정보를 수신하는 것이다. 저소비전력은 체내시스템을 CMOS 회로로 구성하였고, 시스템이 사용되지 않을 때는 전원을 OFF 하였고, 또한 전원의 간헐적 동작으로 커맨드수신기 자체의 소비전력도 줄일 수 있다. 국내에서 개발되고 있는 각종센서를 본 시스템과 함께 삽입하면 압력, pH와 온도 등의 생체정보를 측정하여 전송 가능하다. This research presents a manufacture of the multiple subjects biotelemetry system using custom CMOS IC fabricated 5㎛ n-well process technology and proposes the principle operation of the multiple subjects telemetry. This system can transmit maximum 7-channel physiological signals simultaneously from a selected one among the 8 subjects. Implantable circuits of this system, except for the sensor interface circuits and a FM transmitter, are fabricated on a single chip with the size of 4×4㎟. It is possible to assemble the internal system in a hybrid package as small size 3×3×2.5㎠ by using this chip. Main features of this system are to select one of the 8 subjects and to enable continuous measurement of physiological signals, and to accomplish ON/OFF switching of an implanted battery by receiving subject selection signals and command signals from the external circuit. The object of this system is due to transmit physiological signal obtained from the several different implanted system, and to receive such information on external recorders. Low power consumption of internal system is acomplished by using CMOS circuits for the digital part and by disconnecting the power source of analog circuits when the system is not in use, and also achieved by adding a pulse powered circuit to the command receiver which concept involves intermittent getting of the power supply. This system used together with appropriate sensors is expected to be capable of measuring and transmitting such significant parameters as pressure, pH and temperature.
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정귀상,석전성,중촌철랑,Chung, Gwiy-Sang,Ishida, Makoto,Nakamura, Tetsuro The Korean Sensors Society 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
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徐熙敦,魚秀海,高野亮一,李榮泰,中村哲郞 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
Three kinds of pressure sensors, which diaphragm size are 0.8Xo.8mm^(2), 0.8X1.2mm^(2) and 0.8X2.4mm^(2) respectively, have been fabricated. In order to obtain optimum gauge according to results of FEM simulation about distribution of shear stress. Three strain gauge with different locations are made on a rectangular diaphragm. The sensitivities of gauges made at the edge of the longer axis(y axis) in 0.8X1.2mm^(2) and 0.8X2.4mm^(2)diaphragm size, are 10.4mV/V·kgf/cm^(2) and 11.1mV/V·kgf/cm^(2) respectively. These are above twice the sensitivities of gauges that is located at the center of the same diaphragms.
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