http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
실리콘 카바이드(SiC) 단결정 기판의 화학적 기계적 연마
안준호(Joonho An),이명한(Myounghan Lee),유민종(Minjong Yuh),박영봉(Yeongbong Park),서헌덕(Heondecok Seo) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
This study focused on investigation into the effect of the slurry of CMP on both material removal rate and subsurface damage removal by mixing the nano-sized diamond abrasives and oxidizer into the conventional colloidal silica slurry. 2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. The sliced SiC wafers lapped by a slurry with 1 ~ 9 ㎛ diamond particles. Wafers after the final mechanical polishing using the slurry of 0.1 ㎛ diamond particles were diced as the coupon wafers sized by 10? 0㎟ for CMP. The surface roughness of SiC wafer was analyzed by an atomic force microscope (AFM) and the weight change of the SiC wafer between before and after CMP process was measured in order to determine the MRR value. Molten KOH etching at 490℃ for 3min was performed to confirm the presence of subsurface damage after CMP.