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송용진(Y. -J. Song),주승기(S. -K. Joo) 한국자기학회 1994 韓國磁氣學會誌 Vol.4 No.4
Change in the electrical resistance of artificial superlattice under two magnetic fields-the main and the secondary magnetic field-has been studied with respect to each magnetic field strength in (200) textured Co /Cu artificial superlattice. When the two magnetic fields were applied in the same direction. lateral shift of the magnetoresistance curve occurred, while splitting phenomenon of the maximum resistance appeared when the two magnetic fields were applied at the right angle. When the angle between the two magnetic fields became 45˚ shifting as well as splitting occurred in the magnetoresistance curve. This magnetoresistance behavior with double magnetic fields in the artificial superlattices could be explained with the macroscopic spin alignment model newly suggested in this work.
자기저항소자의 바이어스용 Co82Zr6Mo₁₂ 박막의 구조 및 전자기적 특성에 미치는 자장 중 열처리의 영향
김용성(Y. S. Kim),노재철(J. C. Ro),이경섭(K. S. Lee),서수정(S. J. Suh),김기출(K. C. Kim),송용진(Y. J. Song) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.2
The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of Co_(82)Zr_6Mo₁₂ thin (200~1200 Å) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but 4πMs does not change with increasing the film thickness. The coercivity of the films was decreased below 300 ℃ due to stress relief and decreasing the surface roughness, while increased at 400 ℃ due to partial grain growth. And then, 4pMs was almost independent of annealing temperatures below 200 ℃, but increased from 7.4 kG to 8.0 kG at 300 ℃ and at 400 ℃, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 μΩ㎝. After annealing at 300 ℃, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 ℃ in 400 Oe rotating magnetic field.
김용성(Y. S. Kim),노재철(J. C. Ro),박현순(H. S. Park),서수정(S. J. Suh),김기출(K. C. Kim),송용진(Y. J. Song) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.4
We investigated that the fabrication and reproducing signal characteristics of tri-layered magnetoresistance (MR) element for the high density magnetic thin film heads and sensors. Magnetoresistance curve of tri-layered MR element predicted by computer modeling was saturated above external field of -15 Oe~+22 Oe, and it was shifted to linearized region as large as 4 Oe. In the case of fabricated real device, magnetoresistance curve was saturated above external field of ±15 Oe, and it was shifted to linearized region as large as 4 Oe. As shown in real device, MR response curve was in good agreement with the simulation results. As a result of experimental data of reproducing output signal in real device, it retained normal sinusoidal waveforms in 1~4 Oe external magnetic field. In this magnetic field region, the fabricated heads with tri-layered MR element can be operated with good reproduced characteristics. This will be beneficial to the use of efficient processes of manufacturing elements and the vacuum deposition techniques which control thin film properties.
자기저항헤드용 Ni81Fe19 박막의 구조 및 전자기적 특성에 미치는 자장중 열처리의 영향
김용성(Y. S. Kim),이경섭(K. S. Lee),서수정(S. J. Suh),박현순(H. S. Park),김기출(K. C. Kim),송용진(Y. J. Song) 한국자기학회 1996 韓國磁氣學會誌 Vol.6 No.4
The effects of annealing in magnetic field after deposition on electromagnetic properties of Ni_(81)Fe_(19) thin(400Å) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity of the films was decreased below 300 ℃ due to stress relief and recrystallization, while increased at 400 ℃ due to grain growth and increasing the surface roughness. And then, 4πMs was almost independent of annealing temperatures. Increasing the annealing temperature, the electrical resistivity of films was decreased from 37 μΩ㎝ to 24 μΩ㎝, the magnetoresistance was nearly a constant of about 0.6 μΩ㎝, and the MR ratio was increased from 1.5 % to 3.1 %. Therefore, It was shown that increasing the magnetoresistive ratio was mainly affected by decreasing the electrical resistivity. Considering the practical application of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 ℃ in 400 Oe unidirectional magnetic field.
CO / Cu 인공초격자에서 구리기저층에 첨가된 니켈의 양이 자기저항에 미치는 영향
민경익(K. I. Min),송용진(Y. J. Song),주승기(S. K. Joo) 한국자기학회 1993 韓國磁氣學會誌 Vol.3 No.4
The effect of Ni content in Cu underlayer on the magnetoresistance of Cu / Co artificial superlattice has been investigated. As the content of Ni increased, the preferred orientation of artificial superlattice changed from fcc (100) to fcc (111) due to the change of the preferred orientation of the underlayer. When the content of Ni was 6 %, 26.7 % of magneto resistance with 175 Oe of saturation field could be obtained in [Cu(19 Å) / Co(30 Å)]_(20)| Cu-6%Ni(200 Å) / Si.