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호흡 양상 장애에 대한 사각근의 역할과 치료법에 대한 소고
변동욱(Dong-Wook Byun),유홍창(Hong-Chang You),하원배(Won-Bae Ha),이정한(Jung-Han Lee) 턱관절균형의학회 2020 턱관절균형의학회지 Vol.10 No.1
There are studies on breathing pattern disorder (BPD), but the causes of BPD are still complex, and various studies are ongoing. This study reviewed several studies to investigate the possibility that pathological changes in the scalene muscles may be one of the causes of dyspnea, and that treatment of them may improve respiratory disorders. Anatomically, the scalene muscles are located between the cervical vertebrae and the transverse process of the ribs and act as a respiratory muscle. If there is a problem or excessive in its role, it can cause chest breathing or oral breathing. These problems may further affect respiratory diseases such as hyperventilation syndrome, obstructive disease, restrictive disease, and respiratory disorders. According to the results of previous studies, it seems that manual therapy or exercise therapy for the scalene muscles can contribute to the treatment of BPD.
4H-SiC 기판 위에 RF Sputter로 증착된 NiO 박막의 후열처리 효과
문수영 ( Soo-young Moon ),김민영 ( Min-yeong Kim ),변동욱 ( Dong-wook Byun ),이건희 ( Geon-hee Lee ),구상모 ( Sang-mo Koo ) 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.2
Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.
4H-SiC 기반으로 제작된 MPS Diode의 Schottky 영역 비율에 따른 전기적 특성 분석
이형진 ( Hyung-jin Lee ),강예환 ( Ye-hwan Kang ),정승우 ( Seung-woo Jung ),이건희 ( Geon-hee Lee ),변동욱 ( Dong-wook Byun ),신명철 ( Myeong-choel Shin ),양창헌 ( Chang-heon Yang ),구상모 ( Sang-mo Koo ) 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.3
In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.