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태양 전지용 CaAl<sub>2</sub>Se<sub>4</sub>: Co 단결정 박막 성장과 태양 전지로의 응용
방진주,홍광준,Bang, Jin-Ju,Hong, Kwang-Joon 한국태양에너지학회 2018 한국태양에너지학회 논문집 Vol.38 No.1
The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.
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뜨거운 곁쌓기 법에 의해 성장된 MgGa2Se4 단결정 박막의 열처리 효과
방진주 ( Jin Ju Bang ),김혜정 ( Hye Jeong Kim ),박향숙 ( Hwang Seuk Park ),강종욱 ( Jong Wuk Kang ),홍광준 ( Kwang Joon Hong ) 한국센서학회 2014 센서학회지 Vol.23 No.1
The evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa2Se4 compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were 610oC and 400oC, respectively.The source and substrate temperatures were 610oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni`s relation, Eg(T) = 2.34 eV(8.81 10-4 eV/ K)T2/(T+251 K). After the as-grown MgGa2Se4 single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of MgGa2Se4 single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VMg, VSe obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted MgGa2Se4 single crystal thin films to an optical n-type. Also, we confirmed that Ga in MgGa2Se4/GaAs did not form the native defects because Ga in MgGa2Se4 single crystal thin films existed in the form of stable bonds.
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태양 전지용 CaAl₂Se₄: Co 단결정 박막 성장과 태양 전지로의 응용
방진주(Bang Jin-Ju),홍광준(Hong Kwang-Joon) 한국태양에너지학회 2018 한국태양에너지학회 논문집 Vol.38 No.1
The stoichiometric mixture of evaporating materials for the CaAl₂Se₄: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CaAl₂Se₄, it was found orthorhomic structure whose lattice constant a0, b0 and c0 were 6.4818, 11.1310 Å and 11.2443 Å, respectively. To obtain the CaAl₂Se₄: Co single crystal thin film, CaAl₂Se₄: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were 600°C and 440°C respectively. The crystalline structure of CaAl₂Se₄: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the CaAl₂Se₄: Co obtained from the absorption spectra was well described by the Varshni"s relation, Eg(T) = 3.8239 eV - (4.9823 × 10-3 eV/K)T₂/(T + 559 K). The open-circuit voltage, short current density, fill factor ,and conversion efficiency of p-Si/ p-CaAl₂Se₄: Co heterojunction solar cells under 80 mW/cm² illumination were found to be 0.42 V, 25.3 mA/cm², 0.75 and 9.96%, respectively.
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Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구
박창선 ( Chang Sun Park ),홍광준 ( Kwang Joon Hong ),박진성 ( Jin Sun Park ),이봉주 ( Bong Ju Lee ),정준우 ( Jun Woo Jeong ),방진주 ( Jin Ju Bang ),김현 ( Hyun Kim ) 한국센서학회 2004 센서학회지 Vol.13 No.2
N/A A stoichiometric mixture of evaporating materials for CuAISe₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, CuAlSe₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(I00) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuAISe₂ single crystal thin films measured with Hall effect by van der Pauw method are 9.24 × 10^(16) cm^(-3) and 295 cm²N s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAISe₂ obtained from the absorption spectra was well described by the Varshni`s relation, E_(g)(T) = 2.8382 eV - (8.68×10^(-4) eV/K)T²/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuAISe₂ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively. by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Aso definitely exists in the Γ_(5) states of the valence band of the CuAISe₂. The three photocurrent peaks observed at 10 K are ascribed to the A_(1-), B_(1-), and C_(1-) exciton peaks for n = 1.
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