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박훈수(Hoon Soo Park),강준원(Joon Wun Kang) 한국물환경학회 1998 한국물환경학회지 Vol.14 No.3
In drinking water sources, quantitative/qualitative analysis about 56 pesticides and over 200 micropollutants was performed using Purge & Trap, Liquid-Liquid Extraction and XAD resin accumulation preconcentration methods and GC/MS. In that results, various contaminants were identified and target organics for treatment could be selected. Contamination of pesticides was severe in rainy season, august and its level exceeds over EC limit(500ng/L). Most domestic drinking water sources were contaminated with a large portion of phthalates, thus the pollution were suspected from wastewater of plastic industries. Nakdong river water was most severe in pollution of CH₂Cl₂ extractable organics, aliphatic hydrocarbons, pesticides, phenols, phthalates and sulfur compounds, therefore this water was found to be polluted by industrial wastewater, agricultural chemicals heavily.
TCE , PCE 존재하에서 오존 / 과산화수소 정수처리공정에 의한 부산물 생성에 관한 연구
강준원,박훈수 ( Joon Wun Kang,Hoon Soo Park ) 한국물환경학회 1996 한국물환경학회지 Vol.12 No.2
A bench scale investigation was conducted of by products of trichloroethylene(TCE) and tetrachloroethylene(PCE) oxidation by the ozone/hydrogen peroxide advanced oxidation process(AOP). Post-chlorination of ozone/peroxide treated water was also investigated. Byproducts analyzed for TCE and PCE destruction in the ozone/peroxide experiments were chloral hydrate and di-and trichloroacetic acid (DCA and TCA). In TCE spiked (500∼700 ppb) ozone/peroxide runs, chloral hydrate was formed up to the level of 0.2 ppb and was slowly destroyed as the run progressed. Dichloroacetic acid and trichloroacetic acid was produced by the oxidation of TCE and PCE, respectively. In the post-chlorination experiments of PCE Spiked ozone/peroxide runs, concentration of chloral hydrate, DCA, and TCA were higher in the chlorinated water, but the levels seems to be quite below the maximum contamination level goal(MCLG) of USEPA.
모터구동 회로 응용을 위한 대전력 전류 센싱 트렌치 게이트 MOSFET
김상기(Sang-Gi Kim),박훈수(Hoon-Soo Park),원종일(Jong-Il Won),구진근(Jin-Gun Koo),노태문(Tae-Moon Roh),양일석(Yil-Suk Yang),박종문(Jong-Moon Park) 한국전기전자학회 2016 전기전자학회논문지 Vol.20 No.3
본 논문은 전류 센싱 FET가 내장되어 있고 온-저항이 낮으며 고전류 구동이 가능한 트렌치 게이트 고 전력 MOSFET를 제안하고 전기적 특성을 분석하였다. 트렌치 게이트 전력 소자는 트렌치 폭 0.6 ㎛, 셀 피치 3.0 ㎛로 제작하였으며 내장된 전류 센싱 FET는 주 전력 MOSFET와 같은 구조이다. 트렌치 게이트 MOSFET의 집적도와 신뢰성을 향상시키기 위하여 자체 정렬 트렌치 식각 기술과 수소 어닐링 기술을 적용하였다. 또한, 문턱전압을 낮게 유지하고 게이트 산화막의 신뢰성을 증가시키기 위하여 열 산화막과 CVD 산화막을 결합한 적층 게이트 산화막 구조를 적용하였다. 실험결과 고밀도 트렌치 게이트 소자의 온-저항은 24 mΩ, 항복 전압은 100 V로 측정되었다. 측정한 전류 센싱 비율은 약 70 정도이며 게이트 전압변화에 대한 전류 센싱 변화율은 약 5.6 % 이하로 나타났다. In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with 0.6 ㎛ trench width and 3.0 ㎛ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated 24 mΩ and 100 V, respectively. The measured current sensing ratio and it’s variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.