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Ni/AlN/4H-SiC 구조로 제작된 소자의 후열처리 효과
민성지(Seong-Ji Min),구상모(Sang-Mo Koo) 한국전기전자학회 2020 전기전자학회논문지 Vol.24 No.2
본 연구에서는 RF 스퍼터를 이용하여 SiC 기판위에 AlN막을 증착하고 급속 열처리 (RTA) 공정의 온도에 따른 AlN/4H-SiC 구조의 전기적, 재료적 특성에 대한 영향을 분석하였다. 400도에서 RTA 공정을 진행한 Ni/AlN/4H-SiC SBD 소자의 온/오프 비율은 RTA 공정 전 그리고 600도에서 RTA 공정을 한 소자에 비해 약 10배정도 높은 값을 가졌다. 또한 오제이 전자현미경을 통한 원자성분 분석을 통해 증착한 AlN 층내의 존재하는 산소의 양이 후열 처리 조건에 따라 변화함을 확인하였고 소자의 온/오프 비율 그리고 온-저항 등 소자의 성능에 영향을 주는 것을 분석하였다. 추가적으로, 제작한 소자의 노출된 음향 주파수에 따른 전기적 특성변화를 분석하였다. We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400 ℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600 ℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400 ℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.
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이영재,조슬기,서지호,민성지,안재인,오종민,구상모,이대석,Lee, Young-Jae,Cho, Seulki,Seo, Ji-Ho,Min, Seong-Ji,An, Jae-In,Oh, Jong-Min,Koo, Sang-Mo,Lee, Deaseok 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6
1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.
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온도에 따른 4H-SiC에 기반한 SBD, PiN 특성 비교
서지호,조슬기,이영재,안재인,민성지,이대석,구상모,오종민,Seo, Ji-Ho,Cho, Seulki,Lee, Young-Jae,An, Jae-In,Min, Seong-Ji,Lee, Daeseok,Koo, Sang-Mo,Oh, Jong-Min 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6
Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.
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