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      • The application of Nano-paste for high efficiency back contact Solar cell

        남동헌(Nam, Donghun),이규일(Lee, Kyuil),박용환(Park, Yonghwan) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11

        In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below 250?C) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

      • 단결정 실리콘 태양전지의 통계적 접근 방법을 이용한 texturing 공정 최적화

        김범호(Kim, Bumho),김회창(Kim, Hoechang),남동헌(Nam, Donghun),조영현(Cho, Younghyun) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11

        For reducing outer reflection in mono-crystalline silicon solar cell, wet texturing process has been adapted for long period of time. Nowadays mixed solution with potassium hydroxide and isopropyl alcohol is used in silicon surface texturing by most manufacturers. In the process of silicon texturing, etch rate is very critical for effective texturing. Several parameters influence the result of texturing. Most of all, temperature, process time and concentration of potassium hydroxide can be classified as important factors. In this paper, temperature, process time and concentration of potassium hydroxide were set as major parameters and 3-level test matrix was created by using robust design for the optimized condition. The process optimization in terms of lowest reflection and stable etch rate can be traced by using robust design method.

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