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      • RHEED에 依한 Si(111) 表面 및 Au, Ag, Ge 蒸着量에 따른 表面構造의 調査

        朴東秀,鄭燦翊,鄭烝敏,崔鐘武 慶北大學校 自然科學大學 1987 自然科學論文集 Vol.5 No.-

        The clean Si(111) and Si(111) surface structures induced by Au, Ag, Ge deposition were investigated by RHEED. cleaning of the sample was done by passing the dc current directly through the sample and the temperatures of the sample were measured by reading the currents. The background vacuum pressure of the RHEED chamber was about 2∼5×10^-10 torr during the experiments. The clean Si(111) 7×7 superlattice surface structure was obtained by heating the sample up to 1,250℃ repeatedly. The Si(111) 7×7 structure was remained from room temperature to 830℃. Above 830℃ the 7×7 structure turned to 1×1 structure. This structure transition was reversible. The 7×7 structure is energetically most stable in spite of its formation at rather high temperture. When Au, Ag and Ge atoms were deposited on the Si(111) 7×7 surface, the dependence of structures and phases on substrate temperatures and deposited coverages was drasical. Au/Si(111) surface has 7×7, 7×7+5×1, α-√3×√3, β-√3×√3 and 6×6 superstructures for the various thickness of Au film and substrate temperatures. Ag/Si(111) surface has √3×√3, √3×√3+3×1, √3×√3+3×1+6×1, 7×7+6×1+3×1 and 7×7+√3×√3 superstructures for the variot thickness of Ag film and substrate temperatures. When Ag was deposited on substrate at temperature ranged between 290℃ and 550℃, Ag rod patterns appeared on the √3×√3 structure induced by Ag deposition. It was considered due to the Stranski-Krastanov growth of Ag. Ge/Si(111) surface has 7×7, 7×7+5×5, 5×5 and 7×7(G3) superstructures for the various thickness of Ge film and substrate temperatures. It was found that the difference of the lattice constant for Si(111) 7×7 and Ge/Si(111) 7×7 and Ge/Si(111) 7×7 is about 3%.

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