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Performance of Differential Field Effect Transistors with Porous Gate Metal for Humidity Sensors
이성필,Chowdhury, Shaestagir 한국센서학회 1999 센서학회지 Vol.8 No.6
Differential field effect transistors with double gate metal for integrated humidity sensors have been fabricated and the drain current drift characteristics to relative humidity have been investigated. The aspect ratio was 250/50 for both transistors to get the current difference between the sensing device and non-sensing one. The normalized drain current of the fabricated humidity sensitive field effect transistors increases from 0.12 to 0.3, as relative humidity increases from 30 % to 90 %.
페닝 소스 스퍼터링 장치를 이용한 결정성 질화탄소막의 성장 및 물리적 특성
이성필(Sung Pil Lee),(Shaestagir Chowdhury) 한국센서학회 2000 센서학회지 Vol.9 No.3
N/A Penning type sputtering system which has two opposed targets was implemented and the physical characteristics of the deposited carbon nitride films were investigated. When argon ratio was reduced and nitrogen ratio was increased in the sputtering gas mixture, Fe was less sputtered. The grain size of grown carbon nitride films was distributed from 150Å to 250Å. As nitrogen partial pressure increases, growth rate and nitrogen incorporation in the film increases.