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- 검색키워드
- 주제어 : X-ray diff raction (검색결과 4 건)
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Santiago Sánchez-Beitia,Daniel Luengas-Carreño,Paulo B. Lourenço 한국강구조학회 2021 International Journal of Steel Structures Vol.21 No.6
The X-ray diff raction technique for determining residual stresses in construction steels has been commonly used in the international scientifi c community for decades. Taking advantage of the concepts on which the technique is based, the authors have previously calibrated and used the technique for the in situ determination of the stress states of metallic structures in service. This article presents an advance in the latter utility by means of the laboratory calibration of the X-ray diff raction technique in corrugated steel. The interaction between radiation and steel is complex, so, in the scientifi c community, it is considered pertinent to resort to empirical and experimental calibration processes. Two bars of corrugated steel were subjected to increasing tensile loads. The load states introduced in the testing machine were compared with those determined by X-ray diff raction. The correlation between the values of the loads applied and those determined by the proposed technique is excellent. The experimental conditions of the calibration tests are precisely detailed so that they are easily reproducible. This work represents a necessary fi rst step in employing the technique in the buildings or civil works.
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Parbati Naik,Amrita Nayak,Sunanda Kumari Patri 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
We report the results of temperature and frequency dependent dielectric properties of a structural modified K 0.5 Na 0.5 NbO 3-Bi 0.5 Na 0.5 TiO 3 based material; (Bi 0.4 La 0.1 K 0.5 Nb 0.5 Fe 0.5 O 3 ) to attain a lead free alternative for the fabrication of multifunctional devices. The X-ray diffraction (XRD) analysis reveals the formation of rhombohedral crystal structure. The dielectric constant measurements indicate that the transition temperatures were independent of measured frequencies. The frequency dependent dielectric constant and loss tangent showed a decreasing trend. The observed dielectric loss anomalies were relatively weak near the transition temperature. The remnant polarization (P r ) and coercivity (E c ) of the sample were found to be 9.848 μC/cm 2 , and 0.511 kV/cm respectively.
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Ying Zeng,Bin Jiang,Ouling Shi,Gaofen Quan,Salih Al-Ezzi,FuSheng Pan 대한금속·재료학회 2018 METALS AND MATERIALS International Vol.24 No.4
Some alloying elements (Al, Er, Gd, Li, Mn, Sn, Y, Zn) were proved recently by calculations or experiments to improve theformability of Mg alloys, but ignoring their site preference in Mg crystals during the calculated process. A crystallographicmodel was built via fi rst principle calculations to predict the site preferences of these elements. Regularities between dopingelements and site preferences were summarized. Meanwhile, in the basis of the crystallographic model, a series of formulaswere deduced combining the diff raction law. It predicted that a crystal plane with abnormal XRD peak intensity of the Mgbasedsolid solutions, compared to that of the pure Mg, prefers to possess solute atoms. Thus, three single-phase solid solutionalloys were then prepared through an original In-situ Solution Treatment, and their XRD patterns were compared. Finally,the experiment further described the site preferences of these solute atoms in Mg crystal, verifying the calculation results.
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김병근,이상렬 한국전기전자재료학회 2018 Transactions on Electrical and Electronic Material Vol.19 No.3
High-performance oxide semiconductor thin-fi lm transistors (TFTs) have been fabricated with 1 wt% silicon-doped indiumzinc oxide (1SIZO). The channel layer of the 1SIZO TFTs was deposited by radio frequency sputtering at room temperature. To investigate the eff ect of annealing on the electrical and structural properties of the TFTs, the annealing temperature wasvaried between 100 and 500 °C. As the annealing temperature increases from 100 to 300 °C, the crystal structure of the1SIZO fi lm showed an amorphous phase. However, for the 1SIZO fi lm annealed at 500 °C, the structure of 1SIZO clearlyshowed a transition from amorphous to polycrystalline. The transfer curve was negative shifted as the annealing temperatureincreased. Further, at the annealing temperature of 400 °C, the 1SIZO TFT became conductive and the off current disappears. This can be attributed to the increase in carrier concentration due to the high annealing temperatures. The electricalproperties of optimized 1SIZO TFTs, such as a fi eld-eff ect mobility (μ FE ) of 13.05 cm 2 /V s, an on/off current ratio (I ON/OFF )of 4.94 × 10 8 , and a subthreshold swing of 0.37 V/decade have been obtained for high performance at the low annealingtemperature of 100 °C.
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