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Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes
S.A. Mahmood,M.Z. Kabir 한국물리학회 2009 Current Applied Physics Vol.9 No.6
A theoretical model for describing the bias-dependent transient and steady-state behavior of dark current in hydrogenated amorphous silicon (a-Si:H) p–i–n photodiode has been developed. An analytical expression for the bias-dependent steady-state thermal generation current is derived by solving the continuity equations for both electrons and holes. The model for describing transient dark current in a-Si:H p–i–n photodiode is developed by considering the depletion of electrons from the i-layer and carrier injection through p–i interface. For photodiodes that have very good junction properties, the high initial dark current decreases with time monotonously and reaches a plateau. However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value. The proposed physics-based dark current model is compared with published experimental results on several photodiodes. The comparison of the model with the experimental data allows an estimate of active dopant concentration in the p-layer and the defect density in the midgap of i-layer. A theoretical model for describing the bias-dependent transient and steady-state behavior of dark current in hydrogenated amorphous silicon (a-Si:H) p–i–n photodiode has been developed. An analytical expression for the bias-dependent steady-state thermal generation current is derived by solving the continuity equations for both electrons and holes. The model for describing transient dark current in a-Si:H p–i–n photodiode is developed by considering the depletion of electrons from the i-layer and carrier injection through p–i interface. For photodiodes that have very good junction properties, the high initial dark current decreases with time monotonously and reaches a plateau. However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value. The proposed physics-based dark current model is compared with published experimental results on several photodiodes. The comparison of the model with the experimental data allows an estimate of active dopant concentration in the p-layer and the defect density in the midgap of i-layer.
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Song, Suwon,Haberl, Jeff S. Elsevier 2017 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.155 No.-
<P><B>Abstract</B></P> <P>This paper presents the results of an experimental study to measure and verify on-site global solar transmittance as a function of varying angles of incidence for glazing samples under natural clear-sky conditions, including: single-pane clear, double-pane clear, and double-pane low-e glazing. Field measurements were implemented using a silicon photodiode sensor and two thermopile-type pyranometers based on an easily-assembled test box with sample glazing. Measurement results were then compared to the published data (i.e., Tsol values in the WINDOW libraries). The results indicate that silicon photodiode sensors can be used to measure and verify direct solar transmittance within an acceptable range of accuracy. However, the global (i.e., direct and diffuse) solar transmittance measured by the thermopile-type sensors was significantly higher than the Tsol values from the WINDOW program. As a result, it is recommended that such field measurements could be used to verify the on-site direct and global solar transmittance of as-built glazing since the WINDOW program currently only accounts for direct (i.e., beam) solar radiation in the reference solar spectrum (i.e., ASTM E891).</P>
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