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An Opportunistic Channel Access Scheme for Interweave Cognitive Radio Systems
Senthuran, Sivasothy,Anpalagan, Alagan,Kong, Hyung Yun,Karmokar, Ashok,Das, Olivia The Korea Institute of Information and Commucation 2014 Journal of communications and networks Vol.16 No.1
We propose a novel opportunistic access scheme for cognitive radios in an interweave cognitive system, that considers the channel gain as well as the predicted idle channel probability (primary user occupancy: Busy/idle). In contrast to previous work where a cognitive user vacates a channel only when that channel becomes busy, the proposed scheme requires the cognitive user to switch to the channel with the next highest idle probability if the current channel's gain is below a certain threshold. We derive the threshold values that maximize the long term throughput for various primary user transition probabilities and cognitive user's relative movement.
An Opportunistic Channel Access Scheme for Interweave Cognitive Radio Systems
Sivasothy Senthuran,Alagan Anpalagan,공형윤,Ashok Karmokar,Olivia Das 한국통신학회 2014 Journal of communications and networks Vol.16 No.1
We propose a novel opportunistic access scheme for cognitiveradios in an interweave cognitive system, that considers thechannel gain as well as the predicted idle channel probability (primaryuser occupancy: Busy/idle). In contrast to previous workwhere a cognitive user vacates a channel only when that channelbecomes busy, the proposed scheme requires the cognitive user toswitch to the channel with the next highest idle probability if thecurrent channel’s gain is below a certain threshold. We derive thethreshold values that maximize the long term throughput for variousprimary user transition probabilities and cognitive user’s relativemovement.
Lee, Tae Ho,Kang, Dae Yun,Kim, Tae Geun American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.40
<P>We fabricate a Pt/Ag:SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB>/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB>-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.</P> [FIG OMISSION]</BR>