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RISS 인기검색어
- 검색키워드
- 저자 : Zhiming Bai (검색결과 5 건)
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ZnO nanowire array ultraviolet photodetectors with self-powered properties
Zhiming Bai,Xiaoqin Yan,Xiang Chen,Hanshuo Liu,Yanwei Shen,Yue Zhang 한국물리학회 2013 Current Applied Physics Vol.13 No.1
A ZnO nanowire (NW) array ultraviolet photodetector (PD) with Pt Schottky contacts has been fabricated on a glass substrate. Under UV light illumination, this PD showed a high photo-to-dark current ratio of 892 at 30 V bias. Interestingly, it was also found that this PD had a high sensitivity of 475 without external bias. This phenomenon could be explained by the asymmetric Schottky barrier height (SBH) at the two ends causing different separation efficiency of photogenerated electronehole pairs, which resulted in the formation of photocurrent. It is anticipated to have potential applications in self-powered UV detection field.
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Root hair‐specific expansins modulate root hair elongation in rice
ZhiMing, Yu,Bo, Kang,XiaoWei, He,ShaoLei, Lv,YouHuang, Bai,WoNa, Ding,Ming, Chen,Hyung‐,Taeg, Cho,Ping, Wu Blackwell Publishing Ltd 2011 The Plant journal Vol.66 No.5
<P><B>Summary</B></P><P>Root hair growth requires intensive cell‐wall modification. This study demonstrates that root hair‐specific expansin As, a sub‐clade of the cell wall‐loosening expansin proteins, are required for root hair elongation in rice (<I>Oryza sativa</I> L.). We identified a gene encoding <I>EXPA17</I> (<I>OsEXPA17</I>) from a rice mutant with short root hairs. Promoter::reporter transgenic lines exhibited exclusive <I>OsEXPA17</I> expression in root hair cells. The OsEXPA17 mutant protein (OsexpA17) contained a point mutation, causing a change in the amino acid sequence (Gly104→Arg). This amino acid alteration is predicted to disrupt a highly conserved disulfide bond in the mutant. Suppression of <I>OsEXPA17</I> by RNA interference further confirmed requirement for the gene in root hair elongation. Complementation of the <I>OsEXPA17</I> mutant with other root hair EXPAs (OsEXPA30 and Arabidopsis EXPA7) can restore root hair elongation, indicating functional conservation of these root hair EXPAs in monocots and dicots. These results demonstrate that members of the root hair EXPA sub‐clade play a crucial role in root hair cell elongation in Graminaceae.</P>
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Jia Liu,Yinghua Zhang,Zhiming Bai,Zhian Huang,Yukun Gao,Yuan Yao 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2019 NANO Vol.14 No.11
An integrated tandem photoelectrochemical (PEC) cell, composed of a three-dimensional (3D) ZnO/CdS/NiFe layered double hydroxide (LDH) core/shell/hierarchical nanowire arrays (NWAs) photoanode and a p-Cu2O photocathode, was designed for unassisted overall solar water splitting in this study. The optical and photoelectrochemical characteristics of ZnO-based photoanodes and Cu2O photocathode were investigated. The results show that ZnO/CdS/NiFe LDH nanostructures offer significantly enhanced performances with a photocurrent density reaching 5.8 mA · cm -2 at 0.9 V and an onset potential as early as 0.1 V (versus RHE). The enhancement can be attributed to the existence of CdS nanoparticles (NPs) which boosts the light absorption in visible region and enhances charge separation. Moreover, the introduction of NiFe LDH nanoplates, with unique hierarchical mesoporous architecture, promotes electrochemical reactions by providing more active sites as co-catalyst. On the above basis, the ZnO/CdS/NiFe LDH–Cu2O two-electrode tandem cell system was established. At zero bias, the device shows a photocurrent density of 0.4 mA · cm -2 along with the corresponding solar-to-hydrogen (STH) conversion efficiency reaching 0.50%. Our results indicate that the tandem PEC cells consisting of metal–oxide–semiconductor photoelectrodes based on Earth-abundant and low-cost materials hold promising application potential for overall solar water splitting.
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Jia Liu,Yinghua Zhang,Zhian Huang,Zhiming Bai,Yukun Gao 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2019 NANO Vol.14 No.2
The pursuit for efficient conversion of methane under ambient conditions remains a challenge. Here, we reported photoelectrocatalytic oxidation of methane into methanol over ZnO nanowire arrays (NWAs) decorated with Au nanoparticles (NPs) under simulated sunlight illumination with ambient conditions. The photoelectrochemical (PEC) performances of the ZnO and ZnO/Au photoanodes were investigated to analyze the behavior and intensity of the reaction process of methane oxidation. The Faradaic efficiency of ZnO/Au was calculated to be 32.11%, nearly three times of 11.69% for ZnO. The above results show that ZnO NWAs exhibited exceptional activity as photoanode for photoelelctrocatalytic methane oxidation, and the decoration of Au NPs further enhanced the photo-activity via the surface plasmon resonance expanding its absorption spectra to visible region. On the other hand, as a co-catalyst, Au can promote the oxidation of methane by providing the trapping sites and active sites to facilitate the separation and also suppress the recombination of photogenerated charges and the existence of Au can boost the reaction by lowering the activation energy. This research demonstrates that ZnO NWAs decorated with Au NPs hold great promise for photoelectrocatalytic methane oxidation.
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Yanwei Shen,Xiang Chen,Xiaoqin Yan,Fang Yi,Zhiming Bai,Xin Zheng,Pei Lin,Yue Zhang 한국물리학회 2014 Current Applied Physics Vol.14 No.3
High quality n-ZnO/p-GaN heterojunction was fabricated by growing highly crystalline ZnO epitaxial films on commercial p-type GaN substrates via radio frequency (RF) magnetron sputtering. Low-voltage blue light emitting diode with a turn-on voltage of w2.5 V from the n-ZnO/p-GaN heterojunction was demonstrated. The diode gives a bright blue light emission located at w460 nm and a low threshold voltage of 2.7 V for emission. Based on the results of the photoluminescence (PL) and electroluminescence (EL) spectra, the origins of the EL emissions were studied in the light of energy band diagrams of ZnOeGaN heterojunction, and may attribute to the radiative recombination of the holes in p-GaN and the electrons injected from n-ZnO, which almost happened on the side of p-GaN layer. These results may have important implications for developing short wavelength optoelectronic devices.
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