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      • Purification and Physicochemical Characterization of a Recombinant Phospholipid Hydroperoxide Glutathione Peroxidase from Oryza sativa

        Wang, Zebin,Wang, Feng,Duan, Rui,Liu, Jin-Yuan Korean Society for Biochemistry and Molecular Biol 2007 Journal of biochemistry and molecular biology Vol.40 No.3

        Phospholipid hydroperoxide glutathione peroxidase (PHGPx) is an unique antioxidant enzyme that directly reduces lipid hydroperoxides in biomembranes. In the present work, the entire encoding region for Oryza sativa PHGPx was expressed in Escherichia coli M15, and the purified fusion protein showed a single band with 21.0 kD and pI = 8.5 on SDS- and IFE-PAGE, respectively. Judging from CD and fluorescence spectroscopy, this protein is considered to have a well-ordered structure with 12.2% $\alpha$-helix, 30.7%$\beta$-sheet, 18.5% $\delta$-turn, and 38.5% random coil. The optimum pH and temperature of the enzyme activity were pH 9.3 and 27$^{\circ}C$. The enzyme exhibited the highest affinity and catalytical efficiency to phospholipid hydroperoxide employing GSH or Trx as electron donor. Moreover, the protein displayed higher GSH-dependent activity towards t-Butyl-OOH and $H_2O_2$. These results show that OsPHGPx is an enzyme with broad specificity for hydroperoxide substrates and yielded significant insight into the physicochemical properties and the dynamics of OsPHGPx.

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        Formation Mechanism of Novel Sidewall Intermetallic Compounds in Micron Level Sn/Ni/Cu Bumps

        Siru Ren,Menglong Sun,Zebin Jin,Yukun Guo,Huiqin Ling,Anmin Hu,Ming Li 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.5

        A new kind of intermetallic compounds (IMC) were found around copper pillar in micron level bumps. To investigate theformation mechanism, three different sized Sn/Ni/Cu bumps (10 μm, 20 μm, 50 μm) were electroplated then reflowed at230 °C for 100 s. After reflow process, a thin layer of IMC was formed around copper pillar, which is attributed to surfacewetting behavior. After aging at 170 °C and 200 °C for different times, the growth mechanism of sidewall IMC was observedby scanning electron microscopy combined with electron backscatter diffraction (EBSD) technology. Surface diffusion wasconsidered to be the main driving force for sidewall IMC growth for the activation energy of them was found to be muchsmaller than that in previous studies. The EBSD results showed a preferred orientation of sidewall Cu3Sngrains <100> beingperpendicular to copper periphery, which indicated direction of Cu atoms flux during Cu3Sngrowth. Formation mechanismof this novel sidewall IMC was proposed based on surface wetting and surface diffusion. The findings contribute to the failuremechanism study in small size bumps and provide insights into the reliability of 3D electronic packaging.

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