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- 저자 : Z. Vashaei (검색결과 2 건)
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Structural characterization of Ga-doped Mg0 .1Zn0.9O layers grown on ZnO/α- Al2O3 templates by P-MBE
Z.Vashaei,C.Harada,A.Setiawan,M.W.Cho,T.Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
In this study, structural properties of epitaxial Ga-doped Mg0:1Zn0:9O layers grown on ZnO/a-Al2O3 templates by plasma-assisted molecular beam epitaxy have been investigated by high-resolution transmission electron microscopy (HRTEM), and highresolution X-ray diraction (HRXRD). From analysis of the diraction pattern, the monocrystallinity of the Mg0:1Zn0:9O layerwith hexagonal structure is conrmed. The orientation relationship between Mg0:1Zn0:9O and the template is determined as(0001ÞMg 0:1Zn0:9Ok(0001)ZnOk(0001ÞAl2O3 and [2.1.10.Mg 0:1Zn0:9O k[2.1.10]ZnOk[1.100.Al2O3. The density of dislocations near the topsurface layers measured by plan-view TEM is about 3.61010 cm. 2, one order of magnitude higher than the value obtained for ZnOlayers ona-Al2O3 with a MgO buer. Cross-sectional observation revealed that the majority of threading dislocations are in the[001] line direction, i.e. they lie along the surface normal and consist of edge, screw, and mixed dislocations. Cross- sectional TEMand X-ray rocking curve experiments reveal that most of dislocations are edge dislocations. The interface of Mg0:1Zn0:9O and ZnOlayers and the eect of excess Ga-doping in these layers have been also studied.
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T. Minegishi,Z. Vashaei,G. Fujimoto,H. Suzuki,K. Sumitani,M. Cho,M. Suemitsu,O. Sakata,S. Tokairin,T. Yao,Y. Narita 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.
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