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Low LO Power V-Band CPW Down-Converter Using a GaAs PHEMT
DanAn,BokHyungLee,YeonSikChae,HyunChangPark,HyungMooPark,이진구 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
We have designed and fabricated a low local oscillator (LO) power V-band coplanar waveguide (CPW) down-converter using GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology for applications to millimeter-wave wireless communication systems. The down-converter was designed using a MIMIC library, including a 0.1-$\mu$m GaAs PHEMT and CPW transmission lines. The fabricated down-converter exhibited a good conversion gain of 2 dB at a low LO power of 0 dBm. The 1 dB compression point was $-$5.2 dBm for an RF input power of $-$6 dBm. Isolations between the LO port and other ports were excellent. The total chip size was 1.8$\times$1.7 mm.