http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Shinya Senba,Naoki Matsumoto,Mitsuhiro Jomura,Hironori Asada,Tsuyoshi Koyanagi,Kengo Kishimoto,Yasuhiro Fukuma 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.12
We have successfully grown EuS (111) epitaxial films on BaF2 (111) and SrF2 (111) substratesby using molecular beam epitaxy at substrate temperatures (TS’s) between 100 and 500 C. Polefigures of X-ray diffraction indicate a high degree of in-plane orientation, and all of the samplesshowvery high resistivity. The surface roughness for 10-nm-thick EuS films on BaF2 (111) and SrF2 (111)substrates measured by using atomic force microscopy (AFM) are 0.122 and 0.092 nm, respectively. The Curie temperature of the EuS films increases up to 16 K with increasing TS. We also try tomanipulate the coercive force, which is an important magnetic property, by Te-doping to achieve ananti-parallel magnetization state between two ferromagnetic layers in spin devices. The obtainedcoercive force for the Te-doped film (110 Oe) is large compared with that for the undoped one (20Oe).