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RISS 인기검색어
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- 저자 : Weon Guk Jeong (검색결과 43 건)
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Epitaxial Growth of Nano Quantum Dots by Metal-Organic Chemical Vapor Deposition
( Weon Guk Jeong ) 대한금속재료학회 ( 구 대한금속학회 ) 2006 ELECTRONIC MATERIALS LETTERS Vol.2 No.2
The characteristics of the MOCVD epitaxial process and the physical properties of quantum wells (QW) are briefly discussed. The growth behavior of quantum dots (QD) through a self-assembling growth mode and the physical properties of the grown QDs are discussed with InP-based QDs. The InGaAs/InGaAsP QDs were grown at an areal density of the QDs as high as 1.1×10(11) ㎝(-2). The FWHMs of the 10 K and room-temperature QD PL peaks were measured as 32 and 63 meV, respectively. The integrated PL intensity at room temperature was measured as 21 % of that at 10K. The threshold current density of the QD laser diodes (LD) was measured as 400 A/㎝(-2) per QD stack. A room temperature cw operation was achieved from ridgewaveguide (RW) QD LDs with five and seven QD stacks. All of the results show that the MOCVD growth condition has been optimized to yield top quality InP QDs thus far. however, the optical quality of these QDs is not as good as that obtainable from QWs mainly due to the nonuniformity in the sizes and compositions of the grown QDs. Nonetheless, the inhomogeneous broadening reported here due to the spread in QD size is beneficial to semiconductor optical amplifiers (SOA), and a high performance QD SOA has been demonstrated.
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