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Interfacial engineering for highly efficient organic solar cells
Walker Bright James,최효성,김진영 한국물리학회 2017 Current Applied Physics Vol.17 No.3
Interfacial engineering using metal oxides, organic surface modifiers and other materials can effectively enhance the performance of conventional and inverted organic solar cells by reducing energy barriers for charge transport, while improving compatibility between organic active layer and inorganic metal oxides or transparent conducting electrodes. This short review introduces several important classes of interfacial materials which have been widely successful in improving the efficiency of organic solar cells, and covers some of the recent advances in this field.
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Solution-processible Organic-inorganic Hybrid Bipolar Field-effect Transistors
Gil Jo Chae,Kang Dae Kim,Shinuk Cho,Walker Bright James,Jung Hwa Seo 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.7
Organic-inorganic hybrid bipolar field-effect transistors (HBFETs) comprising a layer of p-type organic poly(3-hexylthiophene) (P3HT) separated from a parallel layer of n-type inorganic zinc oxide (ZnO) were demonstrated by solution processing. In order to achieve balanced hole and electron mobilities, we initially optimized the hole-transporting P3HT channel by the addition of the polar non-solvent acetonitrile (AN) to P3HT solutions in chloroform, which induced a selfassembled nano-fibril morphology and an enhancement of hole mobilities. For the electron channel, a wet-chemically-prepared ZnO layer was optimized by thermal annealing. Unipolar P3HT FET with 5% AN exhibited the highest hole mobility of 7.20 × 10−2 cm2V−1s−1 while the highest electron mobility (3.64 × 10−2 cm2V−1s−1) was observed in unipolar ZnO FETs annealed at 200 C. The organic-inorganic HBFETs consisting of the P3HT layer with 5% AN and ZnO annealed at 200 C exhibited well-balanced hole and electron mobilities of 1.94 × 10−2 cm2V−1s−1 and 1.98 × 10−2 cm2V−1s−1, respectively.
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