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Mativenga, M.,Di Geng,Chang, J. H.,Tredwell, T. J.,Jin Jang IEEE 2012 IEEE electron device letters Vol.33 No.6
<P>Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied. Turn-on voltage shifts in the positive gate voltage direction as the channel length increases. A low area density of defects in the bulk a-IGZO, which is ultrathin, results in good stability under positive bias stress, whereas interdiffusion of electrons/electron donors from the highly doped source and drain regions to the channel edges results in the dependence of turn-on voltage on channel length. Stable operation of an 11-stage ring oscillator is achieved with a propagation delay time of ~97 μs/stage due to reduced gate-to-drain overlap capacitance and parasitic resistances.</P>
In vivo tumour imaging employing regional delivery of novel Gallium radiolabelled polymer composites
Ross W. Stephens,Gregory D. Tredwell,Jessica L. Bell,Karen J. Knox,Lee A. Philip,Tim J. Senden,Michael J. Tapner,Stephanie A. Bickley,Marcel R. Tanudji,Stephen K. Jones 한국생체재료학회 2021 생체재료학회지 Vol.25 No.2
Background: Understanding the regional vascular delivery of particles to tumour sites is a prerequisite for developing new diagnostic and therapeutic composites for treatment of oncology patients. We describe a novel imageable 67Ga-radiolabelled polymer composite that is biocompatible in an animal tumour model and can be used for preclinical imaging investigations of the transit of different sized particles through arterial networks of normal and tumour-bearing organs. Results: Radiolabelling of polymer microspheres with 67Ga was achieved using a simple mix and wash method, with tannic acid as an immobilising agent. Final in vitro binding yields after autoclaving averaged 94.7%. In vivo stability of the composite was demonstrated in New Zealand white rabbits by intravenous administration, and intrahepatic artery instillations were made in normal and VX2 tumour implanted rabbit livers. Stability of radiolabel was sufficient for rabbit lung and liver imaging over at least 3 hours and 1 hour respectively, with lung retention of radiolabel over 91%, and retention in both normal and VX2 implanted livers of over 95%. SPECT-CT imaging of anaesthetised animals and planar imaging of excised livers showed visible accumulation of radiolabel in tumours. Importantly, microsphere administration and complete liver dispersal was more easily achieved with 8 μm diameter MS than with 30 μm MS, and the smaller microspheres provided more distinct and localised tumour imaging. Conclusion: This method of producing 67Ga-radiolabelled polymer microspheres is suitable for SPECT-CT imaging of the regional vascular delivery of microspheres to tumour sites in animal models. Sharper distinction of model tumours from normal liver was obtained with smaller MS, and tumour resolution may be further improved by the use of 68Ga instead of 67Ga, to enable PET imaging.
Mativenga, Mallory,Su Hwa Ha,Di Geng,Dong Han Kang,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.9
<P>We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electrodes, and when the latter is the drain, channel width (W) decreases with channel length (L), such that the W/L ratio is not changed after pinchoff. As demonstrated herein, this a-IGZO Corbino TFT is, therefore, a good candidate for uniform current drivers in applications, such as active-matrix organic light-emitting diode display pixels, where it would maintain the same drive (diode) currents, even with variations in supply voltage (V<SUB>DD</SUB>).</P>
Billah, Mohammad Masum,Delwar Hossain Chowdhury, Md,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔVTH) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔVTH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (NGD) by 5.25 × 10<SUP>17</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP> and acceptor-like states (NGA) by 7.5 × 10<SUP>16</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP>.</P>
Mativenga, Mallory,Sungjin An,Suhui Lee,Jaegwang Um,Di Geng,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.6
<P>Intrinsic mobility and intrinsic channel resistance (R<SUB>CH</SUB>) of amorphous, In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with varying channel length (L) are investigated using a gated four-probe back-channel-etched TFT design. The intrinsic R<SUB>CH</SUB> is found to decrease from ~500 to ~250 kΩ per unit area by increasing V<SUB>GS</SUB> from 10 to 20 V. The intrinsic mobility is ~17 cm<SUP>2</SUP>/V·s, which is about 20% higher than that derived from the normal two-point probe measurements. Source and drain parasitic resistance (R<SUB>PAR</SUB>) of the a-IGZO TFTs is found to be of the same order of magnitude as the R<SUB>CH</SUB>-which is different from hydrogenated amorphous-silicon (a-Si:H) TFTs, where TFT operation is dominated by R<SUB>PAR</SUB>.</P>
Rai, Ranjana,Yunos, Darmawati M.,Boccaccini, Aldo R.,Knowles, Jonathan C.,Barker, Ian A.,Howdle, Steven M.,Tredwell, Gregory D.,Keshavarz, Tajalli,Roy, Ipsita American Chemical Society 2011 Biomacromolecules Vol.12 No.6
<P><named-content content-type='genus-species' xlink:type='simple'>Pseudomonas mendocina</named-content> was found to produce a unique homopolymer of poly(3-hydroxyoctanoate), P(3HO), rather than a copolymer, when grown on sodium octanoate as the sole carbon source. Although this polymer has been produced by other organisms, interestingly this is the first time an absolute homopolymer has been produced by a wild type organism. In addition, a detailed study on the effects of different extraction methods on the yield, molecular weight, thermal properties, and lipopolysaccharide content of P(3HO) has been carried out. The organism was able to accumulate P(3HO) up to 31.38% of its dry cell weight within 48 h in mineral salt medium. Characterization of the monomer was carried out using FTIR, GC-MS, <SUP>13</SUP>C, <SUP>1</SUP>H, and HSQC NMR spectroscopy. The polymer had a crystallinity of 37.5%, Young’s modulus value of 11.6 MPa and contact angle of 77.3°. Microstructural studies of solvent cast polymer films revealed a smooth surface topography with a root-mean-square roughness value of 0.238 μm.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/bomaf6/2011/bomaf6.2011.12.issue-6/bm2001999/production/images/medium/bm-2011-001999_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/bm2001999'>ACS Electronic Supporting Info</A></P>
Chowdhury, Md Delwar Hossain,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO<SUB>2</SUB>) and bilayer (SiO<SUB>2</SUB>/SiN<SUB>x</SUB>) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts (AVON), the size of which increased with storing time. The negative A VON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO<SUB>2</SUB> passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO<SUB>2</SUB> passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO<SUB>2</SUB> interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).</P>