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- 저자 : Tahira Akber (검색결과 2 건)
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Muhammad Ismail,Shazia Jabeen,Tahira Akber,Ijaz Talib,Fayyaz Hussain,Anwar Manzoor Rana,Muhammad Hussain,Khalid Mahmood,Ejaz Ahmed,Dinghua Bao 한국물리학회 2018 Current Applied Physics Vol.18 No.8
Effect of oxygen annealing on bipolar resistive switching (BRS) properties of TiN/ZnO/CeO2-x/Pt devices was investigated. Bilayer ZnO/CeO2-x thin films were fabricated by rf-magnetron sputtering. It was observed that the improvement in cycle-to-cycle endurance degradation and uniformity of the bilayer ZnO/CeO2-x thin film is optimum at 400 °C annealing temperature due to decrease in oxygen vacancies during annealing, as confirmed by x-ray photoelectron spectroscopy. The BRS could be caused by the formation of interfacial TiON layer, which is most likely to be accountable for creating an adequate quantity of oxygen vacancies necessary for the formation and rupture of conductive filaments. Smaller Gibbs free energy of the formation of interfacial TiON (−611 kJmol−1) layer as compared to bilayer film ZnO (−650 kJmol−1) and CeO2 (−1024 kJmol−1) results in an easier re-oxidation of the filaments through the oxygen exchange with TiN top electrode. The analysis of current– voltage characteristics shows that the charge transport mechanism is Schottky emission. Moreover, the temperature dependence of high resistance state (HRS) and low resistance state (LRS) revealed the physical origin of the RS mechanism, which entails the oxygen vacancies for the formation and rupture of conducting paths.
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Rana, Anwar Manzoor,Ismail, Muhammad,Akber, Tahira,Younus Nadeem, M.,Kim, Sungjun Elsevier 2019 Materials research bulletin Vol.117 No.-
<P><B>Abstract</B></P> <P>We report the transition from unipolar to bipolar switching, multilevel resistive switching, abrupt and gradual reset phenomena in a TaN/CeO<SUB>2</SUB>/Ti: /Pt memory devices. Multilevel resistive switching can be successfully obtained by varying the current compliance in the set process. It was observed that increasing the value of current compliance during the set process decreases the set voltages of the devices and as well as deceases the low and high resistance states, respectively. In addition, we have also observed coexistence of abrupt and gradual reset transition in a Ta/CeO<SUB>2</SUB>/Ti: /Pt memory cell. The device exhibits the excellent bipolar resistive switching characteristics such as endurance performance, device-to-device variability (D2D) and good retention time 10<SUP>4</SUP> s. The oxidation of the TaN top electrode creates an Ohmic contact with CeO<SUB>2</SUB> film and hence injects positively charged oxygen vacancies into the switching layer which looks to be responsible for resistive switching.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Transition from unipolar to bipolar switching in a Ta/CeO<SUB>2</SUB>/Ti: /Pt memory device was investigated. </LI> <LI> Multilevel resistive switching can be successfully obtained by varying the current compliance in the set process. </LI> <LI> Increasing the value of current compliance during the set process deceases the low and high resistance states. </LI> <LI> Electrical conduction mechanism is dominated by Schottky emission at high field regions of abrupt and gradual modes. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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