Analysis on the Langmuir Adsorption Isotherm of the Over-Potentially Deposited Hydrogen (OPD H) at the Polycrystalline Au|Acidic Aqueous Electrolyte Interface Using the Phase-Shift Method

Chun Jang H.,Jeon Sang K. The Korean Electrochemical Society 2001 한국전기화학회지 Vol.4 No.3

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 $0.5M\;H_2SO_4$수용액 계면에서 음극 $H_2$발생 반응을 위한 과전위 전착(흡착)된 수소의 Langmuir흡착등온식을 연구조사 하였다. 다결정 $Au|0.5M\;H_2SO_4$수용액 계면에서, 최적중간주파수일 때 위상이동 $(0^{\circ}\leq{-\phi}\leq90^{\circ})$ 거동은 표면피복율$(1\geq{\theta}\geq0)$ 거동에 정확하게 상응한다. 최적중간주 파수일 때 위상이동 변화 $({-\phi}\;vs.\;E)$즉 위상이동 방법은 다결정 $Au|0.5M\;H_2SO_4$수용액 계면에서 음극 $H_2$발생 반응을 위한 과전위 전착(흡착)된 수소의 Langmuir 흡착등온식$(\theta\;vs.\;E)$을 추정할 수 있는 새로운 방법으로 사용될 수 있다. 다결정 $Au|0.5M\;H_2SO_4$ 수용액 계면에서, 과전위 전착(흡착)된 수소의 흡착평형상수(K)와 표준자유에너지 $({\Delta}G_{ads})$는 각각 $2.3\times10^{-6}$과 $32.2kJ\;mol^{-1}$이다. The Langmuir adsorption isotherm of the over-potentially deposited hydrogen (OPD H) for the cathodic $H_2$ evolution reaction (HER) at the $poly-Au|0.5M\;H_2SO_4$ aqueous electrolyte interface has been studied using cyclic voltammetric and ac impedance techniques. The behavior of the phase shift $(0^{\circ}\leq{-\phi}\leq90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1\geq{\theta}\geq0)$ at the interface. The phase-shift profile $({-\phi}\;vs.\;E)$ for the optimum intermediate frequency, i.e., the phase-shift method, can be used as a new method to estimate the Langmuir adsorption isotherm $(\theta\;vs.\;E)$ of the OPD H for the cathodic HER at the interface. At the poly-$Au|0.5M\;H_2SO_4$ electrolyte interface, the equilibrium constant (K) and standard free energy $({\Delta}G_{ads})$ of the OPD H are $2.3\times10^{-6}\;and\;32.2\;kJ\;mol^{-1}$, respectively.

Determination of the Langmuir and Temkin Adsorption Isotherms of H for the Cathodic H₂ Evolution Reaction at a Pt/KOH Solution Interface Using the Phase-Shift Method

Chun Jang-H.,Jeon Sang-K.,Chun Jin-Y. The Korean Electrochemical Society 2006 한국전기화학회지 Vol.9 No.1

The phase-shift method for determining the Langmuir, Frumkin, and Temkin adsorption isotherms ($\theta_H\;vs.\;E$) of H for the cathodic $H_2$ evolution reaction (HER) at a Pt/0.1 M KOH solution interface has been proposed and verified using cyclic voltammetric, differential pulse voltammetric, and electrochemical impedance techniques. At the Pt/0.1 M KOH solution interface, the Langmuir and Temkin adsorption isotherms ($\theta_H\;vs.\;E$), the equilibrium constants ($K_H=2.9X10^{-4}mol^{-1}$ for the Langmuir and $K_H=2.9X10^{-3}\exp(-4.6\theta_H)mol^{-1}$ for the Temkin adsorption isotherm), the interaction parameters (g=0 far the Langmuir and g=4.6 for the Temkin adsorption isotherm), the rate of change of the standard free energy of $\theta_H\;with\;\theta_H$ (r=11.4 kJ $mol^{-1}$ for g=4.6), and the standard free energies (${\Delta}G_{ads}^{\circ}=20.2kJ\;mol^{-1}$ for $k_H=2.9\times10^{-4}mol^{-1}$, i.e., the Langmuir adsorption isotherm, and $16.7<{\Delta}G_\theta^{\circ}<23.6kJ\;mol^{-1}$ for $K_H=2.9\times10^{-3}\exp(-4.6\theta_H)mol^{-1}$ and $0.2<\theta_H<0.8$, i.e., the Temkin adsorption isotherm) of H for the cathodic HER are determined using the phase-shift method. At intermediate values of $\theta_H$, i.e., $0.2<\theta_H<0.8$, the Temkin adsorption isotherm ($\theta_H\;vs.\;E$) corresponding to the Langmuir adsorption isotherm ($\theta_H\;vs.\;E$), and vice versa, is readily determined using the constant conversion factors. The phase-shift method and constant conversion factors are useful and effective for determining the Langmuir, Frumkin, and Temkin adsorption isotherms of intermediates for sequential reactions and related electrode kinetic and thermodynamic data at electrode catalyst interfaces.

The Phase-Shift Method for the Langmuir Adsorption Isotherms of Electroadsorbed Hydrogens for the Cathodic H₂ Evolution Reactions at the Poly-Pt Electrode Interfaces

천장호,전상규,이재항,Chun, Jang H.,Jeon, Sang K.,Lee, Jae H. The Korean Electrochemical Society 2002 한국전기화학회지 Vol.5 No.3

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 Pt/0.5M $H_2SO_4$ 및 0.5M LiOH수용액 계면에서 저전위 수소흡착(UPD H) 과 전위 수소흡착(OPD H)에 관한 Langmuir 흡착등온식 $({\theta}\;vs.\;E)$ 을 연구조사 하였다. 계면에서 치적중간주파수일 때 위상이동$(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ 거동은 표면피복율$(1{\geq}{\theta}{\geq}0)$ 거동에 정확하게 상응한다. 위상이 동 방법 즉 최적중간주파수일 때 위상이동 변화$({-\phi}\;vs.\;E)$는 계면에서 음극 $H_2$ 발생 반응에 관한 UPD H와 OPDH의 Langmuir흡착등온식을 결정할 수 있는 새로운 전기화학적 방법으로 사용할 수 있다 다결정 Pt/0.5M $H_2SO_4$ 수용액 계면에서 OPD H의 흡착평형상수(K)와 표준자유에너지$({\Delta}G_{ads})$는 각각 $2.1\times10^{-4}$와 21.0kJ/mol 이다. 다결정 Pt/0.5M LiOH 수용액 계면에서 K는 음전위(E)에 따라 2.7 (UPD H)에서 $6.2\times10^{-6}$ (OPD H) 또는 $6.2\times10^{-6}$(OPD H)에서 2.7 (UPD H)로 전이한다. 유사하게 ${\Delta}G_{ads}$는 E에 따라 -2.5kJ/mol (UPD H)에서 29.7kJ/mol (OPD H)또는 29.7kJ/mol (OPD H)에서 -2.5kJ/mol (UPD H)로 전이한다. K와 ${\Delta}G_{ads}$의 전이는 다결정 Pt전극 표면의 상이한 UPD H와 OPD H의 흡착부위에 기인한다. 다결정 Pt전극 계면에서 UPD H와 OPD H는 음극 $H_2$ 발생 반응에 따른 순차적 과정이 아니라, 수소 흡착부위 자체에 따른 독립적 과정이다. UPD H와 OPD H의 기준은 음극 $H_2$발생 반응과 전위가 아니라, 수소 흡착부위와 과정이다. 수용액에서 음극 $H_2$발생 반응에는 다결정 Pt선 전극이 단결정 Pt(100)원반 전극보다 더 효율적이고 유용하다 위상이동 방법은 열역학적 방법과 상충적이 아니라, 보완적이다. The Langmuir adsorption isotherms of the under-potentially deposited hydrogen (UPD H) and the over-potentially deposited hydrogen (OPD H) at the poly-Pt/0.5M $H_2SO_4$ and 0.5 M LiOH aqueous electrolyte interfaces have been studied using cyclic voltammetric and ac impedance techniques. The behavior of the phase shift $(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1{\geq}{\theta}{\geq}0)$ at the interfaces. The phase-shift method, i.e., the phase-shift profile $({-\phi}\;vs.\;E)$ for the optimum intermediate frequency, can be used as a new electrochemical method to determine the Langmuir adsorption isotherms $({\theta}\;vs.\;E)$ of the UPD H and the OPD H for the cathodic $H_2$ evolution reactions at the interfaces. At the poly-Pt/0.5M $H_2SO_4$ aqueous electrolyte interface, the equilibrium constant (K) and the standard free energy $({\Delta}G_{ads})$ of the OPD H are $2.1\times10^{-4}$ and 21.0kJ/mol, respectively. At the poly-Pt/0.5M LiOH aqueous electrolyte interface, K transits from 2.7(UPD H) to $6.2\times10^{-6}$ (OPD H) depending on the cathode potential (E) and vice versa. Similarly, ${\Delta}G_{ads}$ transits from -2.5kJ/mol (UPD H) to 29.7kJ/mol (OPD H) depending on I and vice versa. The transition of K and ${\Delta}G_{ads}$ is attributed to the two distinct adsorption sites of the UPD H and the OPD H on the poly-Pt surface. The UPD H and the OPD H on the poly-Pt surface are the independent processes depending on the H adsorption sites themselves rather than the sequential processes for the cathodic $H_2$ evolution reactions. The criterion of the UPD H and the OPD H is the H adsorption sites and processes rather than the $H_2$ evolution reactions and potentials. The poly-Pt wire electrode is more efficient and useful than the Pt(100) disc electrode for the cathodic $H_2$ evolution reactions in the aqueous electrolytes. The phase-shift method is well complementary to the thermodynamic method rather than conflicting.

체위변경이 Furosemide 이뇨중 Aldosterone 배설에 미치는 영향

성호경,고주환,이장규,박기복,이경희,장호조,서성희,안희중,신옥자 주식회사 녹십자 1977 녹십자의보 Vol.5 No.2

Effects of ginsenoside on large-conductance K_Ca channels in human corporal smooth muscle cells

Sung, H H,Chae, M R,So, I,Jeon, J-H,Park, J K,Lee, S W Macmillan Publishers Limited 2011 International journal of impotence research Vol.23 No.5

Ginseng was known to be an effective natural product that enhances penile erection. However, the precise biological function and mechanisms of action of ginseng with regard to erectile function remain unknown. The principal objective of this study was to identify ginsenoside (principal molecular ingredients of ginseng)-induced activation of large-conductance K<SUB>Ca</SUB> channel in human corporal smooth muscle cells, and to determine ginseng's mechanism of action on penile erection. Electrophysiological studies using cultured human corporal smooth muscle cells were conducted. We evaluated the effects of total ginsenosides (TGS) and ginsenoside Rg3 on large-conductance K<SUB>Ca</SUB> channel by determining whole-cell currents and single-channel activities. There was an increase in outward current dependent on TGS concentration (at +60 mV, 1 μg ml<SUP>−1</SUP>; 168.3±59.3%, n=6, P<0.05, 10 μg ml<SUP>−1</SUP>; 173.2±36.8%, n=4, P<0.05, 50 μg ml<SUP>−1</SUP>; 295.3±62.3%, n=19, P<0.001, 100 μg ml<SUP>−1</SUP>; and 462.3±97.1%, n=5, P<0.001) and Rg3 concentration (at +60 mV, 1 μM (0.78 μg ml<SUP>−1</SUP>); 222.8±64.8%, n=11, P<0.0001, 10 μM; 672.6±137.1%, n=10, P<0.0001, 50 μM; and 1713.3±234.7%, n=15, P<0.001) in the solution that was blocked completely by tetraethylammonium (TEA). Channel opening in cell-attached mode and channel activity in the inside-out membrane patches was also increased significantly by 50 μg of TGS or 10 μM of Rg3. The results of this study suggested that the activation of large-conductance K<SUB>Ca</SUB> channels by ginsenoside could be one mechanism of ginsenoside-induced relaxation in corporal smooth muscle.

A Single-Flux-Quantum Shift Register based on High-$T_c$ Superconducting Step-edge Josephson Junctions

Sung G.Y.,Choi, C.H.,Suh J.D.,Han, S. K.,Kang, K.Y.,Hwang, J.S.,Yoon, S.G.,Jung, K.R.,Lee, Y.H.,Kang, J.H.,Kim, Y.H.,Hahn, T.S. The Korean Superconductivity Society 1999 Progress in superconductivity Vol.1 No.1

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-$T_c$ superconducting (HTS) $YBa_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed on the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height, t/h. The spread of step-edge junction parameters was measured from each 13 junctions with t/h=1/3, 1/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K.

호흡량에 따른 사람의 기도 내 유동 특성에 관한 수치 해석적 연구

성건혁(K.H. Sung),노경철(K.C. Ro),유홍선(H.S. Ryou) 한국전산유체공학회 2012 한국전산유체공학회 학술대회논문집 Vol.2012 No.5

The inspiratory rate of a human is changed with the amount of the workload. The flow field is affected by the inspiratory flow rate. In the flow filed, the wall shear stress is important to predict the inflammation or a injury in airway wall. In addition, the turbulence intensity and secondary flow affect the deposition pattern of particle which is important for the drug-aerosol targeting. Thus the analysis of the flow characteristic in a human airway is important. The purpose of this study is to investigate the effects of the inspiratory flow rate on the flow characteristics in a human airway. The tubular airway is consistent with the oral cavity, pharynx, larynx and trachea. The constant inspiratory flow rate is used at each case of human states regarding the workload. By the effect of geometric airway changes, transition to turbulent airflow after the larynx can occur with relaminarization further downstream. Consequently, the low Reynolds number k-ω turbulence model is used for analysis with flow regime. As the inspiratory flow rate is larger, the wall shear stress and the turbulence intensity increase in airway. On the other hand, the area of recirculation zone is smaller.

High-pressure growth of fluorine-free SmFeAsO_1−<i>x</i> superconducting single crystals

Lee, H-S,Park, J-H,Lee, J-Y,Kim, J-Y,Sung, N-H,Koo, T-Y,Cho, B K,Jung, C-U,Saini, S,Kim, S-J,Lee, H-J IOP Publishing Ltd 2009 Superconductor science & technology Vol.22 No.7

<P>Fluorine-free SmFeAsO<SUB>1−<I>x</I></SUB> single crystals of a nominal composition with <I>x</I> = 0.15 were grown under the pressure of 3.3 GPa and at 1350–1450 °C by using the self-flux method. Plate-shaped crystals of a few–200 µm in lateral size were obtained. The resistively determined superconducting transition of a single crystal was at about 53.5 K, with a narrow resistive transition width of 0.5 K. The detailed crystal structure was analyzed by using synchrotron-irradiated x-ray diffractometry and high-resolution scanning transmission electron microscopy. A sharp transition, a low residual resistivity, and a large residual resistivity ratio indicate the high quality of our single crystals. The temperature and magnetic field dependences of the magnetization also confirmed the absence of extrinsic impurity phases.</P>

High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers

Ryu, H.Y.,Haleem, K.H.,Lee, S.N.,Jang, T.,Son, J.K.,Paek, H.S.,Sung, Y.J.,Kim, H.K.,Kim, K.S.,O.H. Nam,Park, Y.J.,Shim, J.I. IEEE 2007 Photonics Technology Letters Vol.19 No.21

<P>The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of >12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of >300 mW and long device lifetime under CW operation condition at room temperature.</P>

한국인 자궁경부암의 역학적 조사연구

이장규,성호경,박기복,이경희,김광희 주식회사 녹십자 1976 녹십자의보 Vol.4 No.3